SOI材料的制备技术  

Preparation of SOI Materials

作　　者：肖清华[1] 屠海令[1] 周旗钢[1] 王敬[1] 常青[1] 张果虎[1] 

机构地区：[1]北京有色金属研究总院有研半导体材料股份有限公司,北京100088

出　　处：《稀有金属》2002年第6期460-467,共8页Chinese Journal of Rare Metals

基　　金：有色金属研究总院基金项目 (660 1)

摘　　要：SOI材料被誉为“二十一世纪硅集成电路技术”的基础。它可消除或减轻体硅中的体效应、寄生效应及小尺寸效应等 ,在超大规模集成电路、光电子等领域有广阔的应用前景。介绍了注氧隔离、智能剥离、硅片剥离及外延层转移等几种主要的制备SOI材料的方法及近期相关的研究成果。降低制造成本。SOI materials exhibit great application potential in many areas such as ULSI and photoelectronic devices, due to their a ability to alleviating body, parasitical and dimension scaling effects,etc. In this paper ,we review the major methods of preparing SOI materials,which include separation by implanted oxygen, smartcut, bonding and etching back silicon, epitaxial layer transfer and other methods. In particular,some recent advances are expounded. Recent trends exist in reduction of cost, improvement of material quality and acquirement of sufficiently thin top silicon films.

关 键 词：SOI 注氧隔离 智能剥离 硅片键合 减薄 外延层转移 硅 

分 类 号：TN304.12[电子电信—物理电子学]