抗辐射高压集成电路技术现状与发展  

The development of radiation-hardened high voltage integrated circuits

作　　者：周锌[1] 陈浪涛 乔明[1] 罗萍[1] 李肇基[1] 张波[1] ZHOU Xin;CHEN Langtao;QIAO Ming;LUO Ping;LI Zhaoji;ZHANG Bo(State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology of China,Chengdu 610054,Sichuan,China)

机构地区：[1]电子科技大学电子薄膜与集成器件国家重点实验室,四川成都610054

出　　处：《微电子学与计算机》2022年第10期1-16,共16页Microelectronics & Computer

摘　　要：高压集成电路是电能转换和控制的核心芯片.在星链计划为代表的新一代航天技术推动下,航天装备朝着小型轻量化、动力电气化快速发展,对抗辐射高压集成电路提出极大需求.相比大规模数字电路,高压集成电路面临高场与辐射协同效应,对性能影响严重且机理复杂.本文总结了高压集成电路辐射效应研究现状,围绕总剂量与单粒子效应,对高压集成器件与模拟集成电路的辐射影响、机理以及加固技术展开了介绍与总结.High voltage integrated circuit is the core chip for electric energy conversion and control.The new generation of space technology represented by the Starlink program is promoting the rapid development of space equipment toward small weight and power electrification,which has a great demand for radiation-hardened high voltage integrated circuits.Compared with large-scale digital integrated circuits,high voltage integrated circuits face the combined effect of high field and irradiation,leading to severe impacts with complex mechanisms.The purpose of this paper is to summarize research status on radiation effects in high voltage integrated circuits.Focusing on total ionizing dose effect and single event effect,irradiation effects,mechanisms and radiation-hardening technologies of high voltage integrated devices and analog integrated circuits are introduced and summarized.

关 键 词：高压集成电路 高压集成器件 总剂量效应 单粒子效应 抗辐射加固 

分 类 号：TN43[电子电信—微电子学与固体电子学]