GaAs基VCSEL干法刻蚀技术研究综述  

Review of GaAs-Based VCSEL Dry Etching Technology

作　　者：范昊轩 张文博 李沐泽 郝永芹 FAN Hao-xuan;ZHANG Wen-bo;LI Mu-ze;HAO Yong-qin(National Key Laboratory of High Power Semiconductor Laser,Changchun University of Science and Technology,Changchun 130000,China)

机构地区：[1]长春理工大学高功率半导体激光国家重点实验室,吉林长春130000

出　　处：《红外》2023年第2期24-34,共11页Infrared

基　　金：国家自然科学基金项目(11474038);吉林省科技发展计划项目(20200401073GX)。

摘　　要：GaAs基垂直腔面发射激光器(Vertical-Cavity Surface-Emitting Laser,VCSEL)自1977年问世以来,凭借阈值电流较低、光束质量很高、可集成到二维阵列、易单模激射等优势被广泛应用于各个领域,但是其尺寸过小而在制造中难以精确控制精度、等离子体刻蚀时易对掩膜和侧壁造成形貌损伤、刻蚀过程中生成副产物过多等问题,影响了应用范围和提高了制造难度。如何保持高刻蚀速率并尽可能地减小刻蚀损伤成为了目前的研究热点问题。分析了GaAs基VCSEL干法刻蚀技术的研究现状与技术难点,并展望了未来的发展趋势。GaAs-based vertical-cavity surface-emitting laser(VCSEL)has been widely used in various fields since its introduction in 1977 with its advantages such as low threshold current,high beam quality,integration into two-dimensional arrays and easy single-mode maser.However,due to its small size,it is difficult to accurately control the accuracy in manufacturing,and it is easy to cause morphological damage to the mask and side wall during plasma etching,and too many by-products are generated in the etching process,which affects its application scope and improves the manufacturing difficulty.How to maintain high etching rate and reduce etching damage as much as possible has become a hot research topic.The research status and technical difficulties of GaAs-based VCSEL dry etching technology are analyzed,and the future development trend is prospected.

关 键 词：GAAS 垂直腔面发射激光器 干法刻蚀 选择性刻蚀 刻蚀损伤 

分 类 号：O472.8[理学—半导体物理]