GaN HEMT器件^(60)Co-γ辐照效应研究  

Study on^(60)Co-γIrradiation Effect of GaN HEMT Devices

作　　者：邵国键 赵玉峰 王金[1] 周书同 陈韬[1] 景少红 钟世昌[1] SHAO Guojian;ZHAO Yufeng;WANG Jin;ZHOU Shutong;CHEN Tao;JING Shaohong;ZHONG Shichang(Nanjing Electronic Devices Institute,Nanjing,210016,CHN)

机构地区：[1]南京电子器件研究所,南京210016

出　　处：《固体电子学研究与进展》2023年第3期277-280,286,共5页Research & Progress of SSE

基　　金：装备发展部型谱项目(2209WW0002)。

摘　　要：研究了总剂量4 Mrad(Si)^(60)Co-γ辐照对AlGaN/GaN HEMT器件的影响,器件在辐照过程中采用不同的加电方式。辐照过程会增加器件的栅泄漏电流,但辐照终止后电流快速恢复至初始状态。对比辐照前后的直流性能,器件的肖特基势垒高度、阈值电压、漏电流、跨导等未出现退化问题。实验结果表明,基于自主开发的GaN标准工艺平台所制备AlGaN/GaN HEMT器件,具有稳定可靠的^(60)Co-γ抗辐照能力。The influences of AIGaN/GaN HEMT devices were studied before and after 4 Mrad(Si)^(60)Co-γtotal dose radiation.The devices adopted different power supply modes during the radia-tion.The leakage currents increased during the radiation,but they decreased back to the initial state quickly after the radiation was stopped.Comparison of DC performances before and after irradiation,the Schottky barrier height,threshold voltage,drain current and transconductance have shown no deg radations.It indicates that the AIGaN/GaN devices,which are processed by self-developed standard GaN platform,have stable and reliable radiation resistance.

关 键 词：氮化镓高电子迁移率晶体管 辐照效应 总剂量辐照 辐照退化 肖特基势垒 阈值电压 跨导 

分 类 号：TN386[电子电信—物理电子学]