硅掺杂对AlN材料的影响研究  

Study on the Influence of Silicon Doping on AlN Material

作　　者：郭丰杰 王绪 杨发顺 马奎 GUO Fengjie;WANG Xu;YANG Fashun;MA Kui(School of Big Data and Information Engineering,Guizhou University,Guiyang 550025,China;Reliability Engineering Research Center of Semiconductor Power Device of Ministry of Education,Guiyang 550025,China;Guizhou Provincial Key Lab.for Micro-Nano-Electronics and Software Technology,Guiyang 550025,China)

机构地区：[1]贵州大学大数据与信息工程学院,贵州贵阳550025 [2]半导体功率器件可靠性教育部工程研究中心,贵州贵阳550025 [3]贵州省微纳电子与软件技术重点试验室,贵州贵阳550025

出　　处：《贵州大学学报（自然科学版）》2024年第6期14-18,共5页Journal of Guizhou University:Natural Sciences

基　　金：半导体功率器件可靠性教育部工程研究中心开放基金资助项目(ERCME-KFJJ2019-01)。

摘　　要：近年来,对AlN材料的研究热度居高不下,对AlN材料的制备日益成熟,但是对掺杂的研究大多数是理论方面,而有效地掺杂是制备器件的前提之一。本文采用高温热扩散的方式对超宽禁带材料AlN进行N型掺杂实验研究。首先使用磁控溅射仪在AlN薄膜上溅射一层Si,然后进行高温热扩散,热扩散后测试霍尔发现其电导率没有明显规律,分析原因可能是薄膜表面沉积的Si没有完全进入AlN中,表面残余的Si影响了测试结果,进一步使用ICP刻蚀设备刻蚀掉表面残留的Si。SEM测试热扩散前后的薄膜截面厚度,发现热扩散后的厚度小于热扩散前。EDS线扫模式测试其截面发现Si含量从薄膜顶部到底部呈递减趋势,符合扩散规律。XRD测试后发现掺杂后除了衬底峰其余的峰都向大角度偏移,且霍尔测试发现高温热扩散后的样品电导率从10^(-8)Ω^(-1)·cm^(-1)到10^(-5)Ω^(-1)·cm^(-1),这些都说明了AlN材料形成有效的N型掺杂。In recent years,the research fever of AlN materials remains high,and the preparation of AlN materials is becoming more and more mature,but most of the research on doping is theoretical,and effective doping is one of the prerequisites for the preparation of devices.Therefore,in this paper,high-temperature thermal diffusion was used to experimentally investigate the N-type doping of AlN,an ultra-broadband material.Firstly,a layer of Si was sputtered on the AlN film using a magnetron sputtering apparatus,and then high-temperature thermal diffusion was carried out.After thermal diffusion,the test of Hall found that there was no obvious pattern of conductivity,and the reason may be that the Si deposited on the surface of the film do not completely enter into the AlN,and as a result the residual Si on the surface influenced the results of the test.Therefore,the residual Si on the surface was further etched away using the ICP etching equipment.SEM test results of the cross-section thickness of the films before and after thermal diffusion reveal that the thickness after thermal diffusion is less than that before thermal diffusion.The EDS line-scan mode testing of its cross-section reveals a decreasing trend of Si content from the top to the bottom of the film,which is consistent with the diffusion law.XRD tests reveal that after doping all the peaks except the substrate peaks is shifted to a large angle.And Hall's test reveal that the conductivity of the samples after high temperature thermal diffusion range from 10^(-8)Ω^(-1)·cm^(-1) to 10^(-5)Ω^(-1)·cm^(-1),all of which indicate the formation of effective N-type doping of the AlN material.

关 键 词：ALN N型掺杂 ICP刻蚀 磁控溅射 高温热扩散 电导率 

分 类 号：O474[理学—半导体物理]