SiO_2:Er和Si_xO_2:Er薄膜室温Er^(3+)1.54μm波长的电致发光  

Room-temperature Er^(3+)1.54μm Electroluminescence from SiO_2:Er Films and Si_xO_2:Er Films

作　　者：袁放成[1] 冉广照[2] 陈源[2] 戴伦[2] 乔永平[2] 张伯蕊[2] 秦国刚[2] 马振昌[3] 宗婉华[3] 

机构地区：[1]泉州师范学院物理系功能材料研究所,362000 [2]北京大学物理学院,100871 [3]河北半导体研究所

出　　处：《固体电子学研究与进展》2002年第4期492-495,共4页Research & Progress of SSE

基　　金：国家自然科学基金资助 (项目编号 5 983 2 10 0 )

摘　　要：在 n+ -Si衬底上用磁控溅射淀积掺 Er氧化硅 (Si O2 :Er)薄膜和掺 Er富硅氧化硅 (Six O2 :Er,x>1 )薄膜 ,薄膜经适当温度退火后 ,蒸上电极 ,形成发光二极管 (LED)。室温下在大于 4V反偏电压下发射了来自 Er3+的 1 .5 4μm波长的红外光。测量了由 Si O2 :Er/n+ -Si样品和 Six O2 :Er/n+ -Si样品分别制成的两种 LED,其 Er3+1 .5 4μm波长的电致发光峰强度 ,后者明显比前者强。还发现电致发光强度与 Si O2 :Er/n+ -Si样品和 Six O2 :Er/n+Er doped SiO 2(SiO 2:Er)films and Er doped Si x O 2(Si x O 2:Er, x >1)films were deposited on n + Si substrate by magnetron sputtering technique. After these films were annealed at proper temperatures, the electrodes were evaporated on the front and back, respectively, of SiO 2/n + Si samples and Si x O 2/n + Si samples, thus light emitting diodes(LEDs) were fabricated. The LEDs emitted 1.54 μm wavelength light from Er 3+ under the reverse biases higher than 4 V at room temperature. The Er 3+ 1.54 μm electroluminescence(EL) intensity from Si x O 2/n + Si LEDs was more intense than that of SiO 2/n + Si LEDs. And that intensity depends on annealing temperature of SiO 2/n + Si samples and Si x O 2/n + Si samples.

关 键 词：铒 富硅氧化硅 电致发光 纳米硅 

分 类 号：TN305.92[电子电信—物理电子学] TN3