SiC功率金属-半导体场效应管的陷阱效应模型  

Trapping effect modeling for SiC power MESFETs

作　　者：杨林安[1] 张义门[1] 于春利[1] 张玉明[1] 

机构地区：[1]西安电子科技大学微电子研究所,西安710071

出　　处：《物理学报》2003年第2期302-306,共5页Acta Physica Sinica

基　　金：国防科技预研基金 (批准号 :8 1 7 3 )资助的课题~~

摘　　要：针对 4H SiC射频大功率MESFET ,建立了一个解析的陷阱效应模型 ,该模型采用简化参数描述方法 ,并结合自热效应分析 ,从理论上完善了SiCMESFET大信号直流I V特性的解析模型 ,且避免了数值方法模拟陷阱效应的巨大计算量 .An analytical trapping modle, which utilizes concise parameters to describe the impact of deep level traps in the p-bufftr layer on the output characteristics, is proposed for 4H-SiC RF power MESFET. This model is simple in calculations compared,with normally used 2D numerical model. It also takes into account the self-heating effect that plays an important role in saturated region of I-V characteristics. The description of transconductatice degradation, drain conductance decrease and pinch-off voltage dispersion caused by the traps is easily derived by theoretical analysis. The result shows good agreement between simulations and measurements.

关 键 词：SIC 碳化硅 陷阱效应模型 金属-半导体场效应晶体管 深能级陷阱 界面态 

分 类 号：O472[理学—半导体物理]