四探针法测量应变Si_(1-x)Ge_x掺杂浓度  

Measurement of doping concentration in strained Si_(1-x) Ge_x with four-probe array

作　　者：戴显英[1] 王伟[1] 张鹤鸣[1] 何林[2] 张静[2] 胡辉勇[1] 吕懿[1] 

机构地区：[1]西安电子科技大学微电子研究所,陕西西安710071 [2]信息产业部电子24所,重庆400060

出　　处：《西安电子科技大学学报》2003年第2期255-258,280,共5页Journal of Xidian University

基　　金：模拟集成电路国家重点实验室基金资助项目(99JS09 3 1DZ0111)

摘　　要：在对Si1-xGex材料多子迁移率模型分析基础上,建立了Si1-xGex材料电阻率与其Ge组分、掺杂浓度关系的曲线图谱.经过对半导体材料掺杂浓度各种表征技术的分析和实验研究,提出了采用四探针法表征Si1-xGex材料掺杂浓度的技术.该表征技术与Si材料掺杂浓度的在线检测技术相容,且更加简捷.通过实验及对Si1-xGex材料样品掺杂浓度的现代理化分析验证了其可行性.Based on a new majority carrier mobility model of the strained Si 1-x Ge x material, the relation between resistivity and doping concentrations with different Ge compositions has been obtained. With this relation, the doping concentration in strained Si 1-x Ge x can be measured by using a collinear four probe array. The characterization technique is compatible with the on line measure of the doping concentration in Si but much simpler and more convenient.

关 键 词：测量 应变 Si1-xGex材料 迁移率模型 电阻率 掺杂浓度 四探针 硅锗材料 半导体材料 

分 类 号：TN304.24[电子电信—物理电子学]