电子束与光学混合制版技术在GaAs器件研制中的应用  

Applications of mix & match plate-making technology using E-beam and optics for the development of GaAs devices

作　　者：罗四维[1] 王维军[1] 江泽流[1] 刘玉贵[1] 

机构地区：[1]河北半导体研究所,河北石家庄050051

出　　处：《微纳电子技术》2003年第2期39-41,共3页Micronanoelectronic Technology

摘　　要：介绍了用光学制版设备制作GaAs器件光刻中除栅条掩模版外的其它各层掩模版,用高分辨率电子束制版设备制作线宽≤0.5μm、并能与光学设备制作的各层掩模版精确套刻的栅条掩模版,即电子束与光学混合制版技术。对解决两类制版系统制作的掩模版精确互套的方法、干法刻蚀等工艺过程做了必要的阐述。The paper introduces the mix & match plate-making technology using E-beam and optical facilities for the development of GaAs devices, i.e. using an optical tool to make all the mask plates except the gate layer, using a high resolution E-beam tool to make the gate plate, which contains fine lines less than 0.5μm, and can precisely overlay with other layers. The method of precise overlaying mask plates by two different kinds of tools, and the process of dry etching, and so on, are given in this paper.

关 键 词：电子束 光学制版技术 GAAS器件 掩模版 干法刻蚀 电荷积累效应 砷化镓 

分 类 号：TN304.23[电子电信—物理电子学]