氧压对PLD法硅上生长c轴取向LiNbO_3晶体薄膜的影响  

Influence of Oxygen Pressure on Growth of c-Oriented LiNbO_3 Filmson Silicon by Pulsed Laser Deposition

作　　者：王新昌[1] 叶志镇[1] 何军辉[2] 黄靖云[1] 顾星[1] 卢焕明[1] 赵炳辉[1] 

机构地区：[1]浙江大学硅材料国家重点实验室,杭州310027 [2]浙江大学物理系,杭州310027

出　　处：《真空科学与技术》2003年第2期129-131,135,共4页Vacuum Science and Technology

基　　金：国家自然科学基金重大研究规划项目资助 (No 90 10 10 0 9)

摘　　要：本文采用脉冲激光沉积 (PLD)法在Si衬底上生长c轴取向LiNbO3 (LN)晶体薄膜 ,研究氧气压强对薄膜质量的影响。结果表明 ,氧压是生长c轴择优取向LN薄膜的一个重要影响参数。X射线衍射和透射电子显微镜分析表明 ,氧压为 30Pa时生长得到了完全c轴取向的LN薄膜 ,LN(0 0 6 )衍射峰的半高宽为 0 2 1°。A novel technique has been successfully developed to grow c oriented LiNbO 3(LN) films on silicon substrate by pulsed laser deposition(PLD) for the first time without buffer layers and application of external electric field.The microstructures and properties of the LN film were characterized with X ray diffraction (XRD) and transmission electron microscopy (TEM) to evaluate the influence of oxygen pressure on the growth of LN films.We found that oxygen pressure plays a dominant role in the c oriented LN film growth.XRD and TEM results show that 30 Pa is the optimized oxygen pressure in the growth of good quality,highly c oriented LN film.The full width at half maximum (FWHM) of the LN (006) diffraction was found to be only 0.21°.

关 键 词：PLD法 硅衬底 LiNb03晶体薄膜 C轴取向 薄膜生长 脉冲激光沉积 氧压 铌酸锂薄膜 半导体 

分 类 号：TN304.055[电子电信—物理电子学]