H_2表面处理形成Al/n型6H-SiC欧姆接触及其退化机制  

Study of H_2-treatment to Form Al/n-type 6H-SiC Ohmic Contacts and the Annealing Mechanism of the Contacts

作　　者：邬瑞彬[1] 候永[1] 洪根深[1] 龚敏[1] 

机构地区：[1]四川大学物理系,成都610064

出　　处：《四川大学学报（自然科学版）》2003年第3期488-491,共4页Journal of Sichuan University(Natural Science Edition)

摘　　要：作者通过氢气表面热处理,获得了具有较好特性的Al/n 6H SiC欧姆接触.在这种H2处理后的SiC表面,可以直接通过蒸铝(Al)形成欧姆接触,而无须进行退火处理.该方法也适用于低掺杂外延层上的欧姆接触.XPS测试表明,这种欧姆接触是在400℃以上的退化时,由Al及6H SiC中的Si元素互扩散所致.Al/n6HSiC ohmic contact was obtained on thermalH2treated surface. The experiments showed this method was also suitable for ohmic contacts on the lightly doped epilayer and there was no postannealing needed to form the ohmic contacts. The XPS study shows the mechanism that ohmic properties of the contacts become worse is commutative diffusion between aluminum and silicon in 6HSiC.

关 键 词：6H—SiC 欧姆接触 氢化 退火 互扩散 

分 类 号：O472.1[理学—半导体物理] O485[理学—物理]