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作 者:李俊杰[1] 王欣[1] 卞海蛟[1] 郑伟涛[1] 吕宪义[1] 金曾孙[1] 孙龙[2]
机构地区:[1]吉林大学超硬材料国家重点实验室吉林大学材料科学系,吉林长春130023 [2]延边大学理工学院物理系,吉林延吉133002
出 处:《发光学报》2003年第3期305-308,共4页Chinese Journal of Luminescence
基 金:教育部和吉林省科学技术委员会基金资助项目
摘 要:对磁控溅射生长在单晶Si(001)衬底上的CNx薄膜的附着力、粗糙度与衬底偏压的关系进行了研究。CNx薄膜沉积实验在纯N2的环境下进行,衬底温度(Ts)保持在350℃,衬底偏压(Vb)在0~-150V之间变化。利用原子力显微镜(AFM)和划痕试验机来测量CNx薄膜的表面粗糙度及对衬底的附着力。AFM和划痕实验的结果显示衬底偏压Vb对CNx薄膜的附着力和表面粗糙程度的影响很大,在-100V偏压下生长的CNx薄膜表面最光滑(粗糙度最小),同时对Si(001)衬底的附着力最好。最后根据实验结果确定了在单晶Si(001)衬底上生长光滑而且附着力好的CNx薄膜的最佳实验条件。The CNx films were grown on Si (001) substrates using r.f. magnetron sputtering pyrolytic graphite in pure N2. During the deposition, substrate temperature is kept a constant of 350℃ (Ts). The r.f. power and PN2 were fixed at 300W and 05Pa, respectively. Only substrate bias (Vb) is varied from 0V to -150V. The effect of substrate bias on adhesion and roughness of CNx film is discussed. The optimized condition for growing CNx films with the smooth and good adhesion on Si (001) is desired. Atomic force microscopy (AFM) is used to characterize the surface morphology and roughness of the CNx films deposited on the Si (001) substrate. The scratch test was utilized for measurement of coating adhesion of the CNx films on Si (001). The AFM and scratch test results show that the adhesion and roughness of CNx films on Si (001) are highly dependent on substrate bias. It can be found that increased substrate bias causes a rougher surface of CNx films, and correspondingly the minimum value of rms roughness (08nm) was obtained while substrate bias increase up to -100V. But when substrate bias increases continuously from -100V to -150V, the rms roughness of the films is enhanced. It is similar to the change of adhesion of the films with substrate bias. The films grown at Vb=-100V obtain better adhesion to Si substrate than that grown at other substrate bias value. The change trend of roughness and adhesion of films with substrate bias is related to the ion energy reaching to the film surface during deposition. It can be concluded that the adhesion and smoothness of CNx films are highly dependent on the energy of the ions reaching on the surface of the films, whereas substrate bias can control this energy, consequently determine the final quality of the deposited films. Thus an appropriate substrate bias is favorable to deposit good quality films by controlling p
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