DSOI,SOI和体硅MOSFET的特性测量比较  

Comparison of the characteristics of DSOI, SOI and bulk-Si MOSFETs

作　　者：林羲[1] 董业民[2] 何平[1] 陈猛[2] 王曦[2] 田立林[1] 李志坚[1] 

机构地区：[1]清华大学微电子学研究所,北京100084 [2]中科院上海微系统与信息技术研究所离子束重点实验室,上海200050

出　　处：《清华大学学报（自然科学版）》2003年第7期1005-1008,共4页Journal of Tsinghua University(Science and Technology)

基　　金：国家自然科学基金资助项目(59995550-1);国家重点基础研究专项经费(G2000036501)

摘　　要：严重的自热效应和浮体效应是绝缘体上硅(SOI)器件的主要缺点。绝缘体上漏源(DSOI)结构的提出就是为了抑制SOI器件中的这两种效应。为了实现DSOI器件结构并且研究DSOI器件的特性,和SOI器件与体硅器件进行对比,采用新型的局域注氧工艺成功地在同一管芯上制作了DSOI、体硅和SOI3种结构的器件。通过对3种结构器件的电学特性和热学特性的测量比较,证明了DSOI器件成功地抑制了浮体效应,并且大大降低了自热效应。由于DSOI器件漏、源区下方埋氧层的存在,在消除了SOI器件严重的自热效应和浮体效应的同时,保持了SOI器件相对体硅器件的电学特性优势。DSOI器件成功地结合了SOI器件和体硅器件的优点,并且克服了两者的缺点,是一种很有希望的高速低功耗新器件。The drain and source on ins ul ator (DSOI) structure was proposed to suppress floating body effects (FBEs) and the severe self-heating effect in SOI devices, which are the main drawbacks of the SOI structure. The DSOI structure was investigated using a local oxygen imp lantation process to successfully fabricate DSOI, bulk-Si and SOI MOSFETs on th e same die. Measurements of their electrical and thermal characteristics showed that the DSOI devices successfully suppressed the FBEs and that the self-heatin g effect of the DSOI devices was much less than in the SOI devices. In addition the electrical advantages of the SOI devices over the bulk-Si devices remained in the DSOI devices because of the buried oxide layer below the drain and source region. Therefore, the DSOI devices combine the advantages of SOI and bulk-Si devices as promising designs for high-speed, low-power applications.

关 键 词：DSOI SOI 体硅MOSFET 特性测量 绝缘体上硅 绝缘体上漏源 自热效应 浮体效应 场效应器件 

分 类 号：TN386[电子电信—物理电子学]