浮栅ROM与SRAM的辐射效应比较分析  

Comparison and Analysis of Radiation Effects between Floating Gate ROMs and SRAMs

作　　者：贺朝会[1] 耿斌[1] 杨海亮[1] 陈晓华[1] 李国政[1] 王燕萍[1] 

机构地区：[1]西北核技术研究所

出　　处：《电子学报》2003年第8期1260-1262,共3页Acta Electronica Sinica

摘　　要：比较了浮栅ROM和SRAM的中子、质子和γ辐射效应的异同 ,分析了其不同的原因 .与SRAM相比 ,浮栅ROM器件出错时的 14MeV中子注量阈值高 5个量级 ;31.9MeV质子注量阈值高 4个量级 ;总剂量损伤阈值相差不大 ,都在 10 4rad(Si)量级左右 .这些都是由二者存储单元的结构和辐射效应机制决定的 .在空间辐射环境中 ,不需经常擦写数据的情况下 ,应该选用浮栅ROM器件 .Similarities and differences of irradiation effects between floating gate ROMs (Read Only Memory) and SRAM (Static Random Access Memory) are compared. Reasons for differences are analyzed. The 14 MeV neutron fluence threshold when error occurs in floating gate ROMs is higher than that in SRAM by 5 orders of magnitude, 31.9 MeV proton fluence threshold by 4 orders, and total dose threshold is about 104 rad (Si) for both memories. All of these are attributed to the structure of memory cells and mechanism of radiation effects. Floating gate ROMs are preferable to SRAM in application in space radiation environment when data in memory are not required to erase and write frequently.

关 键 词：FLASH ROM EEPROM SRAM 单粒子效应 总剂量效应 

分 类 号：TN47[电子电信—微电子学与固体电子学]