Si基GaN的微结构表征  

Characterization for Microstructure of GaN on Si Substrates

作　　者：江若琏[1] 陈鹏[1] 赵作明[1] 沈波[1] 张荣[1] 郑有[1] 

机构地区：[1]南京大学物理系,南京210093

出　　处：《光散射学报》2003年第4期264-267,共4页The Journal of Light Scattering

基　　金：国家自然科学基金资助课题(60276031;60136020);国家重点基础研究规划项目(G20000683)

摘　　要：采用快速辐射加热/低压-金属有机化学气相淀积(RTP/LP-MOCVD)方法分别以AlN和阳极氧化铝为缓冲层材料在Si衬底上外延生长GaN薄膜,通过X射线衍射谱(XRD)、光荧光谱(PL)、拉曼散射谱(RamanScattering)等手段对它们的微结构进行了表征和分析,结果指出AlN是优良的缓冲层材料。Using AlN and anodic alumina as the respective buffer layers, GaN films on Si (111) were grown by rapid thermal process/low pressure-metalorganic chemical vapor deposition (RTP/LP-MOCVD). Crystal structures of the GaN epilayers were characterized by X-ray diffraction (XRD), photoluminescence (PL) and Raman scattering. Results indicate that AlN is a good buffer material between Si and GaN.

关 键 词：硅基 氮化镓 结构表征 缓冲层 X射线衍射谱 荧光光谱 半导体材料 

分 类 号：TN304.23[电子电信—物理电子学] O433.4[机械工程—光学工程]