新型槽栅nMOSFET热载流子效应的模拟研究  

Modeling Study on Hot Carrier Effect of New Grooved Gate nMOSFET

作　　者：童建农[1] 邹雪城[1] 沈绪榜[1] 

机构地区：[1]华中科技大学图像所IC设计中心,武汉430073

出　　处：《固体电子学研究与进展》2003年第4期400-405,共6页Research & Progress of SSE

摘　　要：应用二维器件仿真程序 PISCES- ,对槽栅结构和平面结构器件的特性进行了模拟比较 ,讨论了槽栅结构 MOSFET的沟道电场特征及其对热载流子效应的影响。槽栅结构对抑制短沟道效应和抗热载流子效应是十分有利的 ,而此种结构对热载流子的敏感 ,使器件的亚阈值特性。The characterisitcs of hot carrier effect in grooved gate and planar MOSFET are simulated using classical 2-D devi ce simulator PISCES-Ⅱ. The electric field of channel in grooved gate and its i mpact on hot carrier effect are studied. The grooved gate is very favorable to s uppressing short channel effects and hot carrier effects. The characteristics of subthreshold and output vary greatly because of its sensitivity to hot carriers .

关 键 词：槽栅结构 NMOSFET 热载流子效应 热载流子退化 器件特性 亚阈值特性 输出特性 

分 类 号：TN432[电子电信—微电子学与固体电子学]