热丝CVD生长SiCN薄膜的研究  

Silicon Carbon Nitride Films Grown by Hot-Filament Chemical Vapor Deposition

作　　者：牛晓滨[1] 廖源[1] 常超[1] 余庆选[2] 方容川[2] 

机构地区：[1]中国科学技术大学结构分析开放研究实验室,合肥230026 [2]中国科学技术大学物理系,合肥230026

出　　处：《无机材料学报》2004年第2期397-403,共7页Journal of Inorganic Materials

基　　金：国家自然科学基金(60176024);安徽省自然科学基金(01044701)

摘　　要：在HFCVD系统中采用SiH4/CH4/H2/N2混合气体成功的制备了SiCN薄膜.SEM照片显示制备的SiCN薄膜由棒状结构构成,而在HRTEM下发现这些棒状结构是由生长在无定型SiCN基体当中的纳米晶粒组成的.进一步的SAED和XRD分析说明SiCN纳米晶粒具有类似于α-Si3N4的结构.XPS和FTIR分析表明薄膜中含有Si、C、N和O几种元素以及C=N、Si-N和C-N等共价键,但是并没有观察到C-Si的存在.由实验得出结论,SiCN晶体的生长包括两个步骤:α-Si3N4团簇的生长和C取代其中Si的过程.The silicon carbon nitride (SiCN) films were successfully synthesized on silicon substrate using SiH4/CH4/H-2/N-2 mixture by hot-filament chemical vapor deposition (HFCVD) without bias. The resultant films consist of many micro-rods with mean diameter about 3mum and lengths up to 35 mum measured by SEM, and the micro-rods are built with blocks of nanocrystalline SiCN grown in amorphous matrix observed by HRTEM. Further SAED and XRD analysis indicate that the structure of SiCN nanocrystal is similar to that of alpha-Si3N4 with small deviations. XPS and FTIR were employed to investigate the compositions of SiCN films, indicating the presence of Si, C, N, O and H, and a chemical bonding network of C=N, N-Si and N-C bonds in SiCN films, but the C-Si bonds absent. From these results, we suggest that the SiCN growth may mainly include two processes: the growth of alpha-Si3N4 clusters and the substitution of Si atoms by C atoms.

关 键 词：HFCVD SiCN薄膜 α-Si3N4 化学气相沉积 纳米晶粒 薄膜生长 

分 类 号：TB383[一般工业技术—材料科学与工程] O484.1[理学—固体物理]