磁控溅射偏压对Zr-Si-N扩散阻挡层组织结构的影响  

Effect of bias on composition and microstructure of Zr-Si-N diffusion barrier

作　　者：宋忠孝[1] 徐可为[1] 陈华[1] 

机构地区：[1]西安交通大学金属材料强度国家重点实验室,西安710049

出　　处：《中国有色金属学报》2004年第3期441-444,共4页The Chinese Journal of Nonferrous Metals

基　　金：国家自然科学基金重点资助项目(59931010);教育部骨干教师计划项目资助

摘　　要：用反应磁控溅射法在不同偏压下沉积了Zr Si N扩散阻挡层。结果表明:Zr Si N膜的成分、电阻率和结构均随偏压的改变而不同;随着溅射偏压的增加,Zr Si N膜的表面粗糙度值增大;Zr/Si比值也随着偏压的增加而增大;电阻率随偏压的增加显著降低;Zr Si N膜的结构为类似Si3N4的氮硅化物非晶相与ZrN组成的复合结构,随着偏压的升高ZrN由非晶转变为纳米晶,而且ZrN晶体相增加。The Zr-Si-N diffusion barrier films were deposited by reactive magnetron sputtering with different negative biases. The composition, resistivity and structure of the Zr-Si-N films depend strongly on the substrates bias. With increasing the bias, the surface roughness and the ratio of Zr to Si of Zr-Si-N increase, but the resistivity of the films decreases. The microstructure of Zr-Si-N films is a composite structure consisting of ZrN and amorphous Si_3N_4-like compound of Si-N. With increasing the bias, the ZrN phase changes from amorphous to nanocrystalline, and the amount of ZrN crystalline phase in the films increases.

关 键 词：Zr-Si-N 扩散阻挡层 组织结构 磁控溅射 偏压 集成电路 

分 类 号：TN405[电子电信—微电子学与固体电子学]