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作 者:朱恩[1] 王志功[1] 冯军[1] 黄颋[1] 王欢[1] 陈海涛[1] 孟凡生[1] 杨守军[1] 吴春红[1] 仇应华[1] 沈桢[1] 郁伟嘉[1] 王雪艳[1] 程树东[1] 孙玲[1] 费瑞霞[1] 王峻峰[1] 刘欢艳[1] 陈明洁[1]
机构地区:[1]东南大学无线电工程系射频与光电集成电路研究所
出 处:《中国有色金属学报》2004年第F01期369-380,共12页The Chinese Journal of Nonferrous Metals
摘 要:介绍了2.5~40Gb/s的光通信收发器处理芯片的研究情况,芯片功能包括复接器、激光驱动器、前置放大器与限幅放大器、时钟恢复和数据判决电路以及分接器。采用的工艺有0.18/0.25μmCMOS,0.15/0.2μmGaAsPHEMT和2μmGaAsHBT等,采用多项目晶圆方式和国外先进的工艺生产线进行芯片制作。研究中采用了高速电路技术和微波集成电路技术,如采用SCFL电路、超动态D触发器电路、同步注入式VCO、分布放大器、共面波导和传输线技术等。在SDH155Mb/s~2.5Gb/s的收发器套片设计方面已实现产品化。还介绍了10Gb/s的收发器套片产品化问题,如封装问题等,讨论了40Gb/s以上速率芯片技术的发展趋势,包括高速器件建模和测试问题等。The transceiver integrated circuits tehcnology of 2.540 Gb/s was studied for optical-fiber communication. The ICs include multiplexer, laser-driver, preamplifier and limiting amplifier, clock recovery and data decision, demultiplexer. The technologies of 0.18/0.25 μm CMOS, 0.15/0.2 μm GaAs PHEMT and 2 μm GaAs HBT were used to research and design the ICs. The MPW(multi-projet wafer) method and advanced foundry technology were adopted to produce the ICs. The high-speed circuit technology and MMIC technology were adopted to research our circuit, such as SCFL structure, super-dynamic DFF, synchronization injection VCO, distributed amplifier, coplanar waveguide and transmission-line technology. The 155 Mb/s2.5 Gb/s SDH transceiver ICs was produced. The developing trand of above 40 Gb/s ICs design technology was discussed, including high-speed device modeling and the ICs testing.
关 键 词:光纤通信 SDH 超高速集成电路 收发器 CMOS GaAs PHEMT HBT SCFL VCO
分 类 号:TN929.11[电子电信—通信与信息系统]
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