射频磁控溅射法制备ZnO薄膜的绿光发射  

Green Photoluminescence Emitted from ZnO Films Deposited by r. f. Magnetron Sputtering

作　　者：王卿璞[1] 张德恒[1] 马洪磊[1] 张兴华[1] 张锡健[1] 

机构地区：[1]山东大学物理与微电子学院,山东济南250100

出　　处：《发光学报》2004年第3期291-294,共4页Chinese Journal of Luminescence

基　　金：国家自然科学基金 ( 60 0 760 0 6) ;教育部博士项目基金 ( 2 0 0 0 0 42 2 0 4)资助项目

摘　　要：用射频磁控溅射法 ,在硅衬底上制备出具有良好的 (0 0 2 )择优取向的多晶ZnO薄膜。研究了室温下薄膜的光致发光特性 ,观察到显著的单绿光发射 (波长为 5 1 4nm)峰。在氧气中 830℃高温退火后 ,薄膜结晶质量明显提高 ,绿光发射峰强度变弱 ;在真空中 830℃高温退火后 ,绿光发射峰强度增加。Highly orientated(002) polycrystalline ZnO films with hexagonal structure have been deposited by using r. f. magnetron sputtering. Strong monochromatic green photoluminescence (located at 514 nm) has been observed in these non intensively doped ZnO films when exited with 320 nm light.For the vacuum annealed samples at 830 ℃, the intensity of the green PL increases markedly. On the contrary, for the samples annealed in oxygen, the intensity of the green PL decreases rapidly. The green emission may correspond to the electron transition from deep oxygen vacancy level to the valance band.

关 键 词：ZNO薄膜 磁控溅射 绿光发射 

分 类 号：O472.3[理学—半导体物理]