Project supported by the National Natural Science Foundation of China(Grant Nos.61176044 and 11074224);the Science and Technology Project for Innovative Scientist of Henan Province,China(Grant No.1142002510017);the Science and Technology Project on Key Problems of Henan Province,China(Grant No.082101510007)
The electron transport behavior across the interface plays an important role in determining the performance of op- toelectronic devices based on heterojunctions. Here through growing CdS thin film on silicon nanoporou...