supported by the National Basic Research Program of China(Grant Nos.2013CBA01600 and 2011CB932700);the National Natural Science Foundation of China(Grant Nos.61222112,61390501,51325204,11334006,and 61306114);the Science Fund from Chinese Academy of Sciences(Grant Nos.1731300500015 and XDB07030100);the Fundamental Research Funds for the Central Universities,China
Silicene, a two-dimensional(2D) honeycomb structure similar to graphene, has been successfully fabricated on various substrates. This work will mainly review the syntheses and the corresponding prope√rties o√f silic...
supported by the National Basic Research Program of China(Grant Nos.2013CBA01600 and 2011CB932700);the National Natural Science Foundation of China(Grant Nos.61222112,61390501 and 51325204);Chinese Academy of Sciences(Grant Nos.1731300500015 and XDB07030100)
An efficient method based on atomic force microscopy(AFM) has been developed to characterize silicon intercalated graphene grown on single crystalline Ir(111) thin films. By combining analyses of the phase image, ...
supported by the National Basic Research Program of China(Grant Nos.2013CBA01600 and 2011CB932700);the National Natural Science Foundation of China(Grant Nos.61222112 and 11334006)
High quality sub-monolayer, monolayer, and bilayer graphene were grown on Ru(0001). For the sub-monolayer graphene, the size of graphene islands with zigzag edges can be controlled by the dose of ethylene exposure. ...
Project supported by Funds from the Ministry of Science and Technology of China(Grant Nos.2013CBA01600 and 2011CB932700);the National Natural Science Foundation of China(Grant Nos.61222112 and 11334006);the Funds from the Chinese Academy of Sciences
Four kinds of defects are observed in graphene grown on Ru (0001) surfaces. After cobalt deposition at room tem- perature, the cobalt nanoclusters are preferentially located at the defect position. By annealing at 5...
Project supported by the National Key Basic Research Program of China(Grant No.2011CB932700);the Knowledge Innovation Project of the Chinese Academy of Sciences(Grant No.KJCX2-YW-W22);the National Natural Science Foundation of China(Grant Nos.51272279 and 51072223)
Defects in silicon carbide (SIC) substrate are crucial to the properties of the epitaxial graphene (EG) grown on it. Here we report the effect of defects in SiC on the crystalline quality of EGs through comparativ...
supported by the Ministry of Science and Technology of China(Grant No.2011CB932700);the Knowledge Innovation Project of Chinese Academy of Science(Grant No.KJCX2-YW-W22);the National Natural Science Foundation of China(Grant Nos.51272279 and51072223)
Using novel ideas for the fabrication of epitaxial graphene (EG) on SiC, two forms of graphene termed as vertical aligned gra- phene sheets (VAGS) and graphene covered SiC powder (GCSP) were derived, respectivel...