supported by the National Natural Science Foundation of China(Nos.60536030,60502005);the National High Technology Research and Development Program of China(Nos.2007AA01Z2A5,2006AA01Z239,2007AA03Z454).
A MOS-NDR(negative differential resistance) transistor which is composed of four n-channel metaloxide -semiconductor field effect transistors(nMOSFETs) is fabricated in standard 0.35μm CMOS technology.This device...
supported by the National Natural Science Foundation of China(Nos.60536030,60502005);the National High Technology Research and Development Program of China(Nos.2007AA01Z2A5,2006AA01Z239,2007AA03Z454)
A zero-pole cancellation transimpedance amplifier(TIA)has been realized in 0.35μm RF CMOS technology for Gigabit Ethernet applications.The TIA exploits a zero-pole cancellation configuration to isolate the input pa...
We propose and analyze a novel Si-based electro-optic modulator with an improved metal-oxide-semiconductor (MOS) capacitor configuration integrated into silicon-on-insulator (SOl). Three gate-oxide layers embedded...
This paper devoted to report the design and the achievement of an optical communication subsystem with 12 parallel channels in one chip.The system is capable of transmitting 10 Gbps bidirectional date over hundreds of...
Founded by the National Natural Science Foundation of China (No.60502005).
Time-slotted optical burst switched network is a potential technique to support IP over Wavelength Division Multiplexing (WDM) by introduce Time Division Multiplexing (TDM) channel to Optical Burst Switching (OBS) tec...