中国科学院微电子研究所所长基金(06SB124004)

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相关作者：黎明徐静波张海英付晓君更多>>
相关机构：中国科学院微电子研究所更多>>
相关期刊：《Journal of Semiconductors》更多>>
相关主题：MHEMTINALAS/INGAASHEMTSGAMETAMORPHIC更多>>
相关领域：电子电信更多>>
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Power Characteristics of Metamorphic In_(0.52)Al_(0.48)As/In_(0.6)Ga_(0.4)As HEMTs on GaAs Substrates with T-Shaped Gate
《Journal of Semiconductors》2008年第12期2331-2334,共4页黎明 张海英 徐静波 付晓君 
supported by the State Key Development Programfor Basic Research of China(No.G2002CB311901);the Equipment Investigation Programin Advance(No.61501050401C);the Dean Fund of the Institute of Microelectronics,Chinese Academy of Sciences,(No.O6SB124004)~~
200nm gate-length power InAlAs/InGaAs MHEMTs with T-shaped gate are characterized for DC, RF, and power performance. The MHEMTs show excellent DC output characteristics with an extrinsic transconductance of 510mS/ mm ...
关键词：MHEMT INALAS/INGAAS power characteristics T-shaped gate 
200nm Gate Length Metamorphic In_(0.52)Al_(0.48)As/In_(0.6)Ga_(0.4) As HEMTs on GaAs Substrates with 110GHz f_T
《Journal of Semiconductors》2008年第9期1679-1681,共3页黎明 张海英 徐静波 付晓君 
the State Key Development Program for Basic Research of China(No.G2002CB311901);the Equipment Investigation Program in Advance(No.61501050401C);the Dean Fund of the Institute of Microelectronics,Chinese Academy of Sciences(No.O6SB124004)~~
200nm gate-length GaAs-based InAlAs/InGaAs MHEMTs are fabricated by MBE epitaxial material and EBL （electron beam lithography） technology. Ti/Pt/Au is evaporated to form gate metals. A T-shaped gate is produced usin...
关键词：MHEMT INALAS/INGAAS electron beam lithography T-shaped gate 
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