Project supported by the National Natural Science Foundation of China (Nos.60477014,60577041,60776040,60777018);the National High Technology Research and Development Program of China (No.2008AA03A336)
The electron mobilities of 4, 7-diphenyl-1, 10-phenanthroline (BPhen) doped 8-hydroxyquinolinatolithium (Liq) at various thicknesses (50-300 nm) have been estimated by using space-charge-limited current measurem...
supported by the National Natural Science Foundation of China(Nos.60773081,60777018);the AM Foundation by Science and Technology Commission of Shanghai Municipality(No.087009741000);the SDC Project by Science and Technology Commission of Shanghai Municipality(Nos.08706201800,077062008,08706201000)
Gate-grounded NMOS (GGNMOS) devices with different device dimensions and layout floorplans have been designed and fabricated in 0.13-μm silicide CMOS technology. The snapback characteristics of these GGN-MOS device...