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国家自然科学基金(61274112): 作品数：15被引量：5H指数：1; 导出分析报告; 相关作者：刘璐徐静平黄勇白玉蓉范敏敏更多>>; 相关机构：华中科技大学黄冈师范学院更多>>; 相关期刊：《微电子学》《Chinese Physics B》《电子学报》《物理学报》更多>>; 相关主题：GATE_DIELECTRICGEOI高K栅介质INTERFACIALMOSFET更多>>; 相关领域：电子电信电气工程理学更多>>

Improved interfacial properties of HfGdON gate dielectric Ge MOS capacitor by optimizing Gd content: 《Chinese Physics B》2019年第12期331-337,共7页Lin Zhou Lu Liu Yu-Heng Deng Chun-Xia Li Jing-Ping Xu; Project supported by the National Key Research and Development Program of China(Grant No.2018YFB2200500);the National Natural Science Foundation of China(Grant Nos.61851406 and 61274112); High-quality dielectric/Ge interface and low gate leakage current are crucial issues for high-performance nanoscaled Ge-based complementary metal–oxide–semiconductor(CMOS) device. In this paper, the interfacial and ...; 关键词：Ge MOS devices HfGdON dielectric interface quality leakage current density

YON界面钝化层改善HfO_(2)/Ge界面特性的研究被引量：1: 《电子学报》2017年第11期2810-2814,共5页程智翔徐钦刘璐; 国家自然科学基金(No.61274112,No.61176100,No.61404055).; 本文采用YON界面钝化层来改善HfO_2栅介质Ge metal-oxide-semiconductor(MOS)器件的界面质量和电特性.比较研究了两种不同的YON制备方法:在Ar+N_2氛围中溅射Y_2O_3靶直接淀积获得以及先在Ar+N_2氛围中溅射Y靶淀积YN再于含氧氛围中退火形...; 关键词：Ge金属-氧化物-半导体界面钝化层 YON 界面态密度

Improved interfacial properties of GaAs MOS capacitor with NH3-plasma-treated ZnON as interfacial passivation layer: 《Journal of Semiconductors》2017年第9期56-61,共6页Jingkang Gong Jingping Xu Lu Liu Hanhan Lu Xiaoyu Liu Yaoyao Feng; supported by the National Natural Science Foundation of China(Nos.61176100,61274112,61404055); The GaAs MOS capacitor was fabricated with HfTiON as high-k gate dielectric and NH3-plasma-treated ZnON as interfacial passivation layer （IPL）, and its interracial and electrical properties are investigated compared...; 关键词：GaAs MOS ZnON interfacial passivation layer NH3-plasma treatment

Investigation on interfacial and electrical properties of Ge MOS capacitor with different NH_3-plasma treatment procedure: 《Journal of Semiconductors》2017年第8期38-43,共6页Xiaoyu Liu Jingping Xu Lu Liu Zhixiang Cheng Yong Huang Jingkang Gong; supported by the National Natural Science Foundation of China(Nos.61176100,61274112); The effects of different NH3-plasma treatment procedures on interracial and electrical properties of Ge MOS capacitors with stacked gate dielectric of HtTiON/TaON were investigated. The NH3-plasma treatment was perfor...; 关键词：Ge MOS NH3-plasma treatment TaON interlayer stacked gate dielectric

NH_3等离子体处理钝化层致Ge MOS界面特性的改善被引量：1: 《微电子学》2017年第3期429-432,共4页罗权徐静平刘璐程智翔黄勇刘晓宇; 国家自然科学基金资助项目(61274112); 制备了以TaYON作为钝化层,以HfTiON作为高k栅介质的Ge MOS电容。研究了NH_3和N_2等离子体处理TaYON对界面特性的影响。结果表明,N_2和NH_3等离子体处理可以有效改善器件的界面及电性能,其中,NH_3等离子体处理的效果更好,可获得更高的k值...; 关键词：高K栅介质等离子体处理表面钝化界面层

Equivalent distributed capacitance model of oxide traps on frequency dispersion of C-V curve for MOS capacitors: 《Chinese Physics B》2016年第11期645-651,共7页卢汉汉徐静平刘璐黎沛涛邓咏雯; Project supported by the National Natural Science Foundation of China(Grant Nos.61176100 and 61274112);the University Development Fund of the University of Hong Kong,China(Grant No.00600009);the Hong Kong Polytechnic University,China(Grant No.1-ZVB1); An equivalent distributed capacitance model is established by considering only the gate oxide-trap capacitance to explain the frequency dispersion in the C-V curve of MOS capacitors measured for a frequency range from...; 关键词：capacitance conductance intuitive negligible imaginary validity explain capacitor biased leakage

Electrical properties of Ge metal–oxide–semiconductor capacitors with high-k La_2O_3 gate dielectric incorporated by N or/and Ti被引量：1: 《Journal of Semiconductors》2016年第6期77-80,共4页徐火希徐静平; supported by the National Natural Science Foundation of China(No.61274112);the Natural Science Foundation of Hubei Province(No.2011CDB165);the Scientific Research Program of Huanggang Normal University(No.2012028803); LaON,LaTiO and LaTiON films are deposited as gate dielectrics by incorporating N or/and Ti into La_2O_3 using the sputtering method to fabricate Ge MOS capacitors,and the electrical properties of the devices are caref...; 关键词：Ge MOS capacitor La2O3 N or/and Ti incorporation interface properties k value

LaTiO高k栅介质Ge MOS电容电特性及Ti含量优化: 《物理学报》2016年第3期273-278,共6页徐火希徐静平; 国家自然科学基金(批准号:61274112);湖北省自然科学基金(批准号:2011CDB165);黄冈师范学院科研项目(批准号:2012028803)资助的课题~~; 采用共反应溅射法将Ti添加到La_2O_3中,制备了LaTiO/Ge金属-氧化物-半导体电容,并就Ti含量对器件电特性的影响进行了仔细研究.由于Ti-基氧化物具有极高的介电常数,LaTiO栅介质能够获得高k值;然而由于界面/近界面缺陷随着Ti含量的升高而...; 关键词：Ge MOS LaTiO 界面质量 k值

High-k gate dielectric GaAs MOS device with LaON as interlayer and NH_3-plasma surface pretreatment被引量：1: 《Chinese Physics B》2015年第12期494-498,共5页刘超文徐静平刘璐卢汉汉; Project supported by the National Natural Science Foundation of China(Grant Nos.61176100 and 61274112); High-k gate dielectric Hf Ti ON Ga As metal-oxide–semiconductor（MOS） capacitors with La ON as interfacial passivation layer（IPL） and NH3- or N2-plasma surface pretreatment are fabricated, and their interfacial an...; 关键词：Ga As MOS La ON interlayer NH3-plasma treatment stacked gate dielectric

Influences of fringing capacitance on threshold voltage and subthreshold swing of a GeOI metal-oxide-semiconductor field-effect transistor: 《Chinese Physics B》2015年第3期327-331,共5页范敏敏徐静平刘璐白玉蓉黄勇; supported by the National Natural Science Foundation of China(Grant No.61274112); Models of threshold voltage and subthreshold swing, including the fringing-capacitance effects between the gate electrode and the surface of the source/drain region, are proposed. The validity of the proposed models i...; 关键词：GeOI metal-oxide-semiconductor field-effect transistor fringing capacitance subthreshold swing threshold voltage

国家自然科学基金(61274112)