云南高校图书馆联盟文献共享服务平台- 国家重点基础研究发展计划(2007CB936700)

国家重点基础研究发展计划(2007CB936700): 作品数：17被引量：33H指数：2; 导出分析报告; 相关作者：李望茹占强安志勇宋贺伦张耀辉更多>>; 相关机构：中国科学院长春理工大学中国科学院研究生院更多>>; 相关期刊：《Chinese Physics B》《Chinese Physics Letters》《红外与激光工程》《Journal of Semiconductors》更多>>; 相关主题：GANINGANLASER_DIODESALGANINTERLAYER更多>>; 相关领域：电子电信电气工程理学一般工业技术更多>>

Dependence of InGaN solar cell performance on polarization-induced electric field and carrier lifetime: 《Chinese Physics B》2013年第9期671-675,共5页杨静赵德刚江德生刘宗顺陈平李亮吴亮亮乐伶聪李晓静何晓光王辉朱建军张书明张宝顺杨辉; support by the National Science Fund for Distinguished Young Scholars of China (Grant No. 60925017);the National Natural Science Foundation of China (Grant Nos. 10990100, 60836003, and 60976045);the National Basic Research Program of China (Grant No. 2007CB936700); The effects of Mg-induced net acceptor doping concentration and carrier lifetime on the performance of a p-i-n InGaN solar cell are investigated. It is found that the electric field induced by spontaneous and piezoele...; 关键词：nitride materials solar cell POLARIZATION

The effects of InGaN layer thickness on the performance of InGaN/GaN p-i-n solar cells: 《Chinese Physics B》2013年第6期666-669,共4页李亮赵德刚江德生刘宗顺陈平吴亮亮乐伶聪王辉杨辉; supported by the National Natural Science Foundation for Distinguished Young Scholars,China (Grant No. 60925017);the National Natural Science Foundation of China (Grant Nos. 10990100,60836003,60976045,61223005,and 61176126);the National Basic Research Program of China (Grant No. 2007CB936700); InGaN/GaN p-i-n solar cells, each with an undoped In0.12Ga0.88N absorption layer, are grown on c-plane sapphire substrates by metal-organic chemical vapor deposition. The effects of the thickness and dislocation densi...; 关键词：nitride materials crystal growth solar cell X-ray diffraction

Formation of Low-Resistant and Thermally Stable Nonalloyed Ohmic Contact to N-Face n-GaN: 《Chinese Physics Letters》2012年第1期220-223,共4页ZENG Chang ZHANG Shu-Ming WANG Hui LIU Jian-Ping WANG Huai-Bing LI Zeng-Cheng FENG Mei-Xin ZHAO De-Gang LIU Zong-Shun JIANG De-Sheng YANG Hui; Supported by the National Natural Science Foundation of China under Grant Nos 60506001,60976045,60836003,60776047 and 61076119;the National Basic Research Program(2007CB936700);the National Science Foundation for Distinguished Young Scholar under Grant No 60925017.; We report on the formation of Ohmic contacts with low resistance and high thermal stability to N-face n-GaN for vertical structure light emitters using a Ti(50nm)/Pt(50nm)/Au(50nm)metal scheme,where the Pt layer is in...; 关键词：Ohmic EMITTER RESISTIVITY

The effects of sapphire nitridation on GaN growth by metalorganic chemical vapour deposition: 《Chinese Physics B》2011年第12期400-403,共4页乐伶聪赵德刚吴亮亮邓懿江德生朱建军刘宗顺王辉张书明张宝顺杨辉; Project supported by the National Natural Science Foundation for Distinguished Young Scholars of China (Grant No. 60925017);the National Natural Science Foundation of China (Grant Nos. 10990100,60836003,and 60776047);the National Basic Research Program of China (Grant No. 2007CB936700);the National High Technology Research and Development Program of China(Grant No. 2007AA03Z401); In situ optical reflectivity measurements are employed to monitor the GaN epilayer growth process above a lowtemperature GaN buffer layer on a c-plane sapphire substrate by metalorganic chemical vapour deposition. It ...; 关键词：X-ray diffraction metalorganic chemical vapour deposition nitrides

Simulation of the light extraction efficiency of nanostructure light-emitting diodes: 《Chinese Physics B》2011年第7期446-449,共4页朱继红王良吉张书明王辉赵德刚朱建军刘宗顺汪德生杨辉; Project supported by the National Science Fund for Distinguished Young Scholars of China (Grant No.60925017);the National Natural Science Foundation of China (Grant Nos.10990100 and 60836003);the National Basic Research Program of China (Grant No.2007CB936700);the National High Technology Research and Development Program of China (Grant No.2007AA03Z401);the Knowledge Innovation Program of the Chinese Academy of Sciences (Grant No.ISCAS2009T05O9S4050000); The light extraction efficiencies have been calculated for various InGaN/GaN multiple quantum well nanostructure light-emitting diodes including nanopillar, nanorough of P-CaN surface, coreshell and nano-interlayer st...; 关键词：light extraction eiffciency InGaN/GaN multiple quantum well NANOSTRUCTURE

应用于聚光光伏模组的全反射式二次聚光器的设计与性能分析被引量：19: 《红外与激光工程》2011年第2期262-266,共5页茹占强安志勇宋贺伦李望卢鑫于秋水张耀辉; 国家973计划资助项目(2007CB936700); 当前聚光光伏系统存在很多问题,比如跟踪器的跟踪精度偏低、聚焦光斑强度分布不均匀、聚焦光斑的形状跟太阳电池不匹配等,二次聚光器可以解决这些问题,从而提高高倍聚光光伏系统的光电转换效率。对高倍聚光光伏系统中的菲涅耳透镜和二...; 关键词：二次聚光器菲涅耳透镜光线追迹

Time delay in InGaN multiple quantum well laser diodes at room temperature: 《Chinese Physics B》2010年第12期305-309,共5页季莲江德生张书明刘宗顺曾畅赵德刚朱建军王辉段俐宏杨辉; Project supported by the National Natural Science Foundation of China (Grant Nos. 60976045,60506001,60836003 and 60776047);the National Basic Research Program of China (Grant No. 2007CB936700);the National Natural Science Foundation for Distinguished Young Scholars of China (Grant No. 60925017); This paper reports that a long delay between the beginning of pumping current pulse and the onset of optical pulse is observed in InGaN laser diodes. The delay time decreases as the pumping current increases, and the ...; 关键词：INGAN laser diode delay effect saturable absorber TRAPS

Evaluation of both composition and strain distributions in InGaN epitaxial film using x-ray diffraction techniques: 《Chinese Physics B》2010年第10期396-402,共7页郭希王辉江德生王玉田赵德刚朱建军刘宗顺张书明杨辉; Project supported by the National Natural Science Foundation of China (Grant Nos. 60506001, 60776047, 60976045, and 60836003);the National Basic Research Programme of China (Grant No. 2007CB936700);the National Natural Science Foundation for Distinguished Young Scholars (Grant No. 60925017); The composition and stain distributions in the InGaN epitaxial films are jointly measured by employing various x-ray diffraction （XRD） techniques, including out-of-plane XRD at special planes, in-plane grazing incid...; 关键词：INGAN In-plane grazing incidence x-ray diffraction reciprocal space mapping biaxialstrain

太阳电池测试系统的研制被引量：5: 《现代科学仪器》2010年第4期72-75,共4页时玉帅韩彦超李仁志王鹏董献堆; 国家973(2007CB936700)项目资助; 为了获得太阳电池的基本性能参数,研究太阳电池动态行为及光电转换机制。我们采用labview8.5语言和光脉冲技术,研制了一套太阳电池测试系统。该系统实现了I-V曲线、电荷提取、光电压衰减、光脉冲扰动瞬态的电池行为测试,可以获得太阳电...; 关键词：太阳电池测试系统 I-V曲线衰减瞬态

Microstructure and strain analysis of GaN epitaxial films using in-plane grazing incidence x-ray diffraction被引量：1: 《Chinese Physics B》2010年第7期471-478,共8页郭希王玉田赵德刚江德生朱建军刘宗顺王辉张书明邱永鑫徐科杨辉; supported by the National Natural Science Foundation of China (Grant Nos. 60506001,60776047,60976045 and 60836003);the National Basic Research Programme of China (Grant No. 2007CB936700);the National Science Foundation for Distinguished Young Scholars,China (Grant No. 60925017); This paper investigates the major structural parameters, such as crystal quality and strain state of （001）-oriented GaN thin films grown on sapphire substrates by metalorganic chemical vapour deposition, using an in...; 关键词：in-plane grazing incidence x-ray diffraction gallium nitride mosaic structure biaxialstrain

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