Project supported by the National Basic Research Program of China(Grant No.2011CBA00606);the National Natural Science Foundation of China(Grant Nos.61404097,61334002,61106106,and 61176130);the Fundamental Research Funds for the Central Universities,China(Grant No.JB140415)
Negative bias temperature instability(NBTI) has become a serious reliability issue, and the interface traps and oxide charges play an important role in the degradation process. In this paper, we study the recovery o...
supported by the National Basic Research Program of China(Grant No.2011CBA00606);the National Natural Science Foundation of China(Grant Nos.61334002,61106106,and 61176130);the Fundamental Research Fund for the Central Universities of China(Grant No.JB140415)
The influence of PMOSFET gate length on the parameter degradation relations under negative bias temperature insta- bility (NBTI) stress is studied. The threshold voltage degradation increases with reducing the gate ...