国家自然科学基金(2010GXNSFB013054)

作品数：3被引量：2H指数：1
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相关期刊：《Journal of Semiconductors》《Chinese Physics B》更多>>
相关主题：SUBSTRATEHIGH-VOLTAGEON-RESISTANCEFIELDDEVICE更多>>
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A high-voltage SOI MOSFET with a compensation layer on the trenched buried oxide layer
《Journal of Semiconductors》2013年第3期31-34,共4页赵秋明 李琦 唐宁 李勇昌 
supported by the Guangxi Natural Science Foundation of China(No.2010GXNSFB013054);the Guangxi Key Science and Technology Program ofChina(No.11107001-20)
A new silicon-on-insulator(SOI) high-voltage MOSFET structure with a compensation layer on the trenched buried oxide layer(CL T-LDMOS) is proposed.The high density inverse interface charges at the top surface of the b...
关键词：trenched buried oxide layer breakdown voltage ON-RESISTANCE compensation layer 
Substrate-bias effect on the breakdown characteristic in a new silicon high-voltage device structure
《Journal of Semiconductors》2012年第5期48-52,共5页李琦 王卫东 赵秋明 韦雪明 
Project supported by the Guangxi Natural Science Foundation of China(No.2010GXNSFB013054);the Guangxi Key Science and Technology Program of China(No.11107001-20)
A novel silicon double-RESURF LDMOS structure with an improved breakdown characteristic by substrate bias technology（SB） is reported.The P-type epitaxial layer is embedded between an N-type drift region and an N-typ...
关键词：substrate bias breakdown voltage diode on-resistance 
A novel thin drift region device with field limiting rings in substrate被引量：2
《Chinese Physics B》2011年第11期433-437,共5页李琦 朱金鸾 王卫东 韦雪明 
supported by the Guangxi Provincial Natural Science Foundation,China(Grant No.2010GXNSFB013054);the Guangxi Provincial Key Science and Technology Program,China(Grant No.11107001-20)
A novel thin drift region device with heavily doped N＋ rings embedded in the substrate is reported, which is called the field limiting rings in substrate lateral double-diffused MOS transistor （SFLR LDMOS）. In the ...
关键词：field limiting ring reduced surface field reduced bulk field breakdown voltage 
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