国家重点基础研究发展计划(2010CB934200)

作品数：6被引量：10H指数：2
导出分析报告
相关期刊：《Chinese Physics B》《Science China Chemistry》《Science Bulletin》更多>>
相关主题：记忆体随机存取存储器RRAMIMPROVINGDOPING更多>>
相关领域：自动化与计算机技术化学工程理学一般工业技术更多>>
-
在结果中检索

检索结果分析

结果分析中...
共 条 记 录，以下是1-6
全选清除导出
参考文献引证文献引用追踪
视图：
排序：
A 65-nm 1-Gb NOR floating-gate flash memory with less than 50-ns access time
《Chinese Science Bulletin》2014年第29期3935-3942,共8页Yu Wang Zongliang Huo Huamin Cao Ting Li Jing Liu Liyang Pan Xing Zhang Yun Yang Shenfeng Qiu Hanming Wu Ming Liu 
supported in part by the Ministry of Science and Technology of China (2010CB934200,2011CBA00600);the National Natural Science Foundation of China (61176073);the National Science and Technology Major Project of China (2009ZX02023-005);the Director’s Fund of Institute of Microelectronics,Chinese Academy of Science
This paper presents a 65-nm 1-Gb NOR-type floating-gate flash memory,in which the cell device and chip circuit are developed and optimized.In order to solve the speed problem of giga-level NOR flash in the deep submic...
关键词：NOR闪存 访问时间 GB 浮栅 NS 深亚微米工艺 芯片电路 速度问题 
An overview of the switching parameter variation of RRAM被引量：1
《Chinese Science Bulletin》2014年第36期5324-5337,共14页Meiyun Zhang Shibing Long Guoming Wang Yang Li Xiaoxin Xu Hongtao Liu Ruoyu Liu Ming Wang Congfei Li Pengxiao Sun Haitao Sun Qi Liu Hangbing L Ming Liu 
supported by the National Natural Science Foundation of China(61322408,61221004,61334007,61274091,61106119 and 61106082);National Basic Research Program of China(2010CB934200 and 2011CBA00602);National High Technology Research and Development Program of China(2011AA010401 and 2011AA010402)
Resistive random access memory(RRAM) has been considered as one of the most promising candidates for next-generation nonvolatile memory, due to its advantages of simple device structure, excellent scalability, fast op...
关键词：切换 参数变化 非易失性存储器 随机存取存储器 统计分析模型 操作速度 统计方法 渗流模型 
Improving the electrical performance of resistive switching memory using doping technology被引量：6
《Chinese Science Bulletin》2012年第11期1235-1240,共6页WANG Yan LIU Oi LU HangBing LONG ShiBing WANG Wei LI YingTao ZHANG Sen LIAN WenTai YANG JianHong LIU Ming 
supported by the National Basic Research Program of China (2010CB934200, 2008CB925002);the National Natural Science Foundation of China (60825403, 50972160);the National High-Tech Research & Development Program of China (2008AA031403, 2009AA03Z306)
In this paper, improvements of resistive random access memory (RRAM) using doping technology are summarized and analyzed. Based on a Cu/ZrO2/Pt device, three doping technologies with Ti ions, Cu, and Cu nanocrystal, r...
关键词：掺杂技术 电气性能 电阻式 记忆体 兴奋剂 随机存取存储器 纳米晶体 电铸工艺 
Approaches for improving the performance of filament-type resistive switching memory被引量：2
《Chinese Science Bulletin》2011年第4期461-464,共4页LIAN WenTai LONG ShiBing LU HangBing LIU Qi LI YingTao ZHANG Sen WANG Yan HUO ZongLiang DAI YueHua CHEN JunNing LIU Ming 
supported by the National Basic Research Program of China (2010CB934200 and 2008CB925002);the National Natural Science Foundation of China (60825403 and 50972160);the National High-Tech Research & Development Program of China (2008AA031403 and 2009AA03Z306)
Resistive random access memory (RRAM) has received significant research interest because of its promising potential in terms of down-scaling,high density,high speed and low power. However,its endurance,retention and u...
关键词：开关性能 记忆体 电阻式 灯丝 随机存取 物理机制 界面工程 工艺优化 
Investigation of resistive switching behaviours in WO_3-based RRAM devices被引量：1
《Chinese Physics B》2011年第1期589-595,共7页李颖弢 龙世兵 吕杭炳 刘琦 王琴 王艳 张森 连文泰 刘肃 刘明 
Project supported by the National Basic Research Program of China(Grant Nos.2008CB925002 and 2010CB934200);the National Natural Science Foundation of China(Grant Nos.60825403 and 50972160);the National High Technology Research and Development Program of China(Grant No.2009AA03Z306)
In this paper, a WO3-based resistive random access memory device composed of a thin film of WO3 sandwiched between a copper top and a platinum bottom electrodes is fabricated by electron beam evaporation at room tempe...
关键词：resistive random access memory resistive switching NONVOLATILE WO3 
Fabrication of multi-sectional TiO_2 nanotube arrays by anodization
《Science China Chemistry》2010年第5期1067-1072,共6页LI ShiQi,YIN JianBo & ZHANG GengMin Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics,Peking University,Beijing 100871,China 
supported by the National Natural Science Foundation of China(60871002);the Ministry of Science and Technology of China (2007CB936204 and 2010CB934200)
We report a facile method to grow multi-sectional TiO2 nanotube arrays consisting of alternating bamboo-shaped and smooth-walled nanotube sections by anodization.Two key factors are necessary for obtaining these morph...
关键词：TITANIUM dioxide TITANIA NANOTUBE anodic OXIDATION 
全选清除导出
共1页<1>
检索报告 对象比较 聚类工具 使用帮助 返回顶部