研究了接触效应对有机薄膜晶体管性能的影响.首先在n型重掺杂Si片上制备了以MOO3修饰的Al电极为源漏电极的Pentacene基OTFTs(organic thin film transistors),器件场效应迁移率μef达到0.42cm2/V·s,阈值电压VT为-9.16V,开关比4.7×103...
Project supported by the National Natural Science Foundation of China (Grant Nos 10774013 and 10804006);the National High Technology Research and Development Program of China (Grant No 2006AA03Z0412);the Research Fund for the Doctoral Program of Higher Education of China (Grant No 20070004024);the Research Fund for the Youth Scholars of the Doctoral Program of Higher Education (Grant No 20070004031);the Beijing NOVA program (Grant No 2007A024);the the 111 of China (Grant No B08002);the research grants from the Academy of Sciences for the Developing World
In order to enhance the performance of regioregular poly(3-hexylthiophene) (RR-P3HT) field-effect transistors (FETs), RR-P3HT FETs are prepared by the spin-coating method followed by vacuum placement and anneali...
supported by the National High Technology Research and Development Program of China (Grant No 2006AA03Z0412);the National Natural Science Foundation of China (Grant Nos 10774013 and 10804006);the Excellent Doctor’s Science and Technology Innovation Foundation of Beijing Jiaotong University (Grant No 48024);the Foundation of Beijing Jiaotong University (Grant No 2005SM057);the Research Fund for the Youth Scholars of the Doctoral Program of Higher Education (Grant No 20070004031);the Beijing NOVA program (Grant No 2007A024);Sponsored by the Scientific Research Foundation for the Returned Overseas Chinese Scholars,State Education Ministry
The properties of top-contact organic thin-film transistors (TC-OTFTs) using ultra-thin 2, 9-dimethyl-4, 7- diphenyl-1, 10-phenanthroline (BCP) as a hole-blocking interlayer have been improved significantly and a ...
supported by the National Natural Science Foundation of China (Grant Nos 10774013,10804006);the National High Technology Research and Development Program of China (Grant No 2006AA03Z0412);the Research Fund for the Doctoral Program of Higher Education of China (Grant No 20070004024);The Research Fund for the Youth Scholars of the Doctoral Program of Higher Education (Grant No 20070004031);the Beijing NOVA Program (Grant No 2007A024);the 111 Project(Grant No B08002)
This paper investigates the effects of concentration on the crystalline structure, the morphology, and the charge carrier mobility of regioregular poly(3-hexylthiophene) (RR-P3HT) field-effect transistors (FETs)...