LINEARITY

作品数:173被引量:141H指数:5
导出分析报告
相关领域:电子电信更多>>
相关作者:代伐石寅黄见秋黄晓东黄庆安更多>>
相关机构:东南大学中国科学院中国科学院微电子研究所清华大学更多>>
相关期刊:更多>>
相关基金:国家自然科学基金国家高技术研究发展计划国家重点基础研究发展计划国家教育部博士点基金更多>>
-

检索结果分析

结果分析中...
选择条件:
  • 期刊=Journal of Semiconductorsx
条 记 录,以下是1-10
视图:
排序:
A review on GaN HEMTs:nonlinear mechanisms and improvement methods被引量:1
《Journal of Semiconductors》2023年第12期31-46,共16页Chenglin Du Ran Ye Xiaolong Cai Xiangyang Duan Haijun Liu Yu Zhang Gang Qiu Minhan Mi 
supported by the Shenzhen Science and Technology Program on Key Basic Research Project undergrant JCYJ20210324120409025;the National Natural Science Foundation of China under grant 61904135。
The GaN HEMT is a potential candidate for RF applications due to the high frequency and large power handling capability.To ensure the quality of the communication signal,linearity is a key parameter during the system ...
关键词:GaN HEMT linearity improvement transconductance reduction transconductance compensation nanowire channel graded channel 
A survey of active quasi-circulators
《Journal of Semiconductors》2020年第11期61-70,共10页Bingjun Tang Li Geng 
With the development of multi-band wireless communication and the increasing data transmission rate,the circulator as an antenna interface must be able to work in multiple frequency bands and provides large bandwidth....
关键词:active quasi-circulator MULTIBAND bandwidth isolation LINEARITY insertion loss 
High-performance RF Switch in 0.13 μm RF SOI process被引量:3
《Journal of Semiconductors》2019年第2期25-28,共4页Hong Guan Hao Sun Junlin Bao Zhipeng Wang Shuguang Zhou Hongwei Zhu 
supported by the 111 Project (No. B12026)
A high-performance single-pole single-throw(SPST) RF switch for mobile phone RF front-end modules(FEMs) was designed and characterized in a 0.13 μm partially depleted silicon-on-insulator(PD SOI) process. In this pap...
关键词:RF SWITCH SOI INSERTION loss ISOLATION LINEARITY 
A high-linearity and high-resolution delay line structure with a calibration algorithm in delay-based LINC transmitters
《Journal of Semiconductors》2016年第1期99-105,共7页韩越 乔树山 黑勇 
In order to overcome the bottleneck of low linearity and low resolution, an improved delay line structure is proposed with a calibration algorithm to conquer PVT (process, voltage and temperature) variations for an ...
关键词:linear amplification with non-linear components (LINC) delay line LINEARITY RESOLUTION 
An inductorless multi-mode RF front end for GNSS receiver in 55 nm CMOS
《Journal of Semiconductors》2015年第10期142-148,共7页罗彦彬 马成炎 甘业兵 钱敏 叶甜春 
An inductorless multi-mode RF front end for a global navigation satellite system (GNSS) receiver is presented. Unlike the traditional topology of a low noise amplifier (LNA), the inductorless current-mode noise- c...
关键词:RF front end noise figure (NF) input matching LINEARITY GNSS receiver 
On-chip power-combining techniques for watt-level linear power amplifiers in 0.18 μm CMOS
《Journal of Semiconductors》2015年第9期105-114,共10页任志雄 张科峰 刘览琦 李聪 陈晓飞 刘冬生 刘政林 邹雪城 
Project supported by the National Natural Science Foundation of China(No.61076030)
Three linear CMOS power amplifiers (PAs) with high output power (more than watt-level output power) for high data-rate mobile applications are introduced. To realize watt-level output power, there are two 2.4 GHz ...
关键词:CMOS LINEARITY power combiner TRANSFORMERS power amplifier 
A fully integrated CMOS VCXO-IC with low phase noise, wide tuning range and high tuning linearity
《Journal of Semiconductors》2015年第6期148-155,共8页杨艳军 曾云 
Project supported by the National Natural Science Foundation of China(No.61350007)
This paper describes a low phase noise, wide tuning range and high tuning linearity CMOS voltage controlled crystal oscillator IC (VCXO-IC) with LVCMOS and LVPECL output. A differential coupled frequency doubling Co...
关键词:VCXO VARACTOR linear frequency tuning low phase noise 
An energy-efficient and highly linear switching capacitor procedure for SAR ADCs
《Journal of Semiconductors》2015年第5期175-180,共6页马瑞 白文彬 朱樟明 
Project supported by the National Natural Science Foundation of China(Nos.61234002,61322405,61306044,61376033);the National High-Tech Program of China(Nos.2012AA012302,2013AA014103)
An energy-efficient and highly linear capacitor switching procedure for successive approximation regis- ter (SAR) ADCs is presented. The proposed switching procedure achieves 37% less switching energy when compared ...
关键词:analog-to-digital converter capacitor switching procedure switching energy LINEARITY successive approximation register 
A high linearity downconverter for digital broadcasting system
《Journal of Semiconductors》2014年第12期114-122,共9页李松亭 李建成 谷晓忱 王宏义 庄钊文 
supported by the Science and Technology Innovation Project for the Postgraduates of National University of Defense Technology
An integrated downconverter with high linearity for digital broadcasting system receivers is implemented in a 0.13 m CMOS process with an active area of 0.1 mm2. The current-mode scheme is adopted to improve linearity...
关键词:current-mode downconverter CMOS switching pair DC offset calibration direct conversion receiver LINEARITY Sallen-Key low-pass filter 
Lower-power, high-linearity class-AB current-mode programmable gain amplifier
《Journal of Semiconductors》2014年第10期98-104,共7页吴毅强 王志功 王俊椋 马力 徐建 唐路 
Project supported by the National Natural Science Foundation of China(Nos.61106024,61201176)
A novel class-AB implementation of a current-mode programmable gain amplifier (CPGA) including a current-mode DC offset cancellation loop is presented. The proposed CPGA is based on a current amplifier and provides ...
关键词:current mode class AB programmable gain amplifier current amplifier 
检索报告 对象比较 聚类工具 使用帮助 返回顶部