TURN-OFF

作品数：30被引量：47H指数：4
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Experimental comparison of SiC GTO and ETO for pulse power applications被引量：3
《Journal of Semiconductors》2018年第12期153-159,共7页Cheng Zeng Linfeng Deng Zongjian Li Jun Wang 
Project supported by the National Natural Science Foundation of China(No.51577054);the Science and Technology Major Project of Hunan Province(No.2017GK1020)
Silicon carbide(SiC) emitter turn-off thyristors(ETOs) are very promising high power capacity semiconductor devices for high voltage and high power density power systems and pulse power applications. However,reports o...
关键词：SIC THYRISTOR emitter turn-off thyristor pulse power 
A novel high performance SemiSJ-CSTBT with p-pillar under the bottom of the trench gate
《Journal of Semiconductors》2016年第8期55-59,共5页贾艳 陈宏 谭骥 卢烁今 朱阳军 
supported by the National Major Science and Technology Special Project of China(No.2013ZX02305005-002);the Major Program of the National Natural Science Foundation of China(No.51490681)
A novel high performance SemiSJ-CSTBT is proposed with the p-pillar under the bottom of the trench gate. The inserted p-pillar with the neighbouring n-drift region forms a lateral P/N junction, which can adjust the el...
关键词：CSTBT high breakdown voltage p-pillar SemiSJ-CSTBT turn-off switching loss 
Novel reverse conducting insulated gate bipolar transistor with anti-parallel MOS controlled thyristor
《Journal of Semiconductors》2014年第7期48-51,共4页朱利恒 陈星弼 
supported by the National Natural Science Foundation of China(No.51237001);the Fundamental Research Funds for the Central Universities of China(No.E022050205)
Novel reverse-conducting IGBT （RC-IGBT） with anti-parallel MOS controlled thyristor （MCT） is proposed. Its major feature is the introduction of an automatically controlled MCT at the anode, by which the anodeshort...
关键词：reverse conducting IGBT snapback flee turn-off energy reverse-recovery charge 
A new short-anoded IGBT with high emission efficiency被引量：2
《Journal of Semiconductors》2012年第11期48-51,共4页陈伟中 张波 李泽宏 任敏 李肇基 
supported by the National Natural Science Foundation of China(Nos.60806025,61076082)
A novel short-anoded insulated-gate bipolar transistor（SA-IGBT） with double emitters is proposed.At the on-state,the new structure shows extraordinarily high emission efficiency.Moreover,with a short-contacted anode...
关键词：short-anode insulated-gate bipolar transistor snapback turn-off tradeoff 
Turn-on and turn-off voltages of an avalanche p-n junction
《Journal of Semiconductors》2012年第9期55-59,共5页张国青 韩德俊 朱长军 翟学军 
supported by the Doctoral Start-Up Fund of Xi'an Polytechnic University,China(No.BS1126);the Project of Ministry of Education,Shanxi Province(No.12JK0975)
Characteristics of the turn-on and turn-off voltage of avalanche p-n junctions were demonstrated and studied. As opposed to existing reports, the differences between the turn-on and turn-offvoltage cannot be neglected...
关键词：Geiger mode avalanche photodiode p-n junction turn-on voltage turn-off voltage 
A novel high performance ESD power clamp circuit with a small area
《Journal of Semiconductors》2012年第9期124-130,共7页杨兆年 刘红侠 李立 卓青青 
supported by the National Natural Science Foundation of China(Nos.60976068,60936005);the Cultivation Fund of the Key Scientific and Technical Innovation Project,Ministry of Education of China(No.708083)
A MOSFET-based electrostatic discharge （ESD） power clamp circuit with only a 10 ns RC time constant for a 0.18-μm process is proposed. A diode-connected NMOSFET is used to maintain a long delay time and save area. ...
关键词：electrostatic discharge clamp circuit false triggering turn-off mechanism 
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