ULTRA-WIDE

作品数：42被引量：47H指数：4
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  • 期刊=Journal of Semiconductorsx
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Efficient p-type doping in ultra-wide band-gap nitrides using non-equilibrium doping method
《Journal of Semiconductors》2021年第6期11-12,共2页Jianbai Xia 
Al-rich nitride,as one of the most important ultra-wide band-gap(UWBG)semiconductors,currently plays the key role of deep ultraviolet(DUV)optoelectronics and potentially possesses the advantages of the huge global inv...
关键词：DOPING ULTRAVIOLET BAND 
Bulk gallium oxide single crystal growth被引量：3
《Journal of Semiconductors》2019年第1期3-4,共2页Xutang Tao 
Gallium oxide, as a new type of ultra-wide bandgap semiconductor, is expected to be used in power electronics and solar blind UV photodetectors. The main cause of research and development onβ-Ga2O3 is inspired by its...
关键词：GALLIUM OXIDE ULTRA-WIDE bandgap SEMICONDUCTOR CRYSTAL growth 
Heteroepitaxial growth of thick α-Ga_2O_3 film on sapphire(0001)by MIST-CVD technique被引量：5
《Journal of Semiconductors》2019年第1期81-85,共5页Tongchuan Ma Xuanhu Chen Fangfang Ren Shunming Zhu Shulin Gu Rong Zhang Youdou Zheng Jiandong Ye 
supported by the National Key Research and Development Project(No.2017YFB0403003);Shenzhen Fundamental Research Project(Nos.201773239,201888588);the National Natural Science Foundation of China(Nos.61774081,61322403);State Key Laboratory of Wide-Bandgap Semiconductor Power Electric Devices(No.2017KF001);the Natural Science Foundation of Jiangsu Province(No.BK20161401);the Six Talent Peaks Project in Jiangsu Province(Mo.2014XXRJ001);the Fundamental Research Funds for the C entral Universities(Nos.021014380093,021014380085)
The 8 μm thick single-crystalline α-Ga2O3 epilayers have been heteroepitaxially grown on sapphire(0001) substrates via mist chemical vapor deposition technique. High resolution X-ray diffraction measurements show th...
关键词：ULTRA-WIDE bandgap semiconductor chemical vapor deposition EPITAXY GALLIUM oxide 
Preface to the Special Issue on Ultra-Wide Bandgap Semiconductor Gallium Oxide: from Materials to Devices
《Journal of Semiconductors》2019年第1期5-5,共1页Xutang Tao Jiandong Ye Shibing Long Zhitai Jia 
As one of the ultra-wide bandgap {UWBG)semiconducting materials,gallium oxide has attractive properties with a wide bandgap of about 4.8 eV and a high breakdown field of about 8 MWcm,which offers an alternative platfo...
关键词：Special ISSUE ULTRA-WIDE Bandgap SEMICONDUCTOR GALLIUM OXIDE 
Ultra-wide tuning single channel filter based on one-dimensional photonic crystal with an air cavity被引量：1
《Journal of Semiconductors》2017年第2期26-30,共5页Xiaodan Zhao Yibiao Yang Zhihui Chen Yuncai Wang Hongming Fei Xiao Deng 
Project supported by the National Natural Science Foundation of China(Nos.61575138,61307069,51205273);the Top Young Academic Leaders and the Outstanding Innovative Teams of Higher Learning Institutions of Shanxi
By inserting an air cavity into a one-dimensional photonic crystal of LiF/GaSb, a tunable filter covering the whole visible range is proposed. Following consideration of the dispersion of the materials, through modula...
关键词：photonic crystal filters transfer matrix method single resonant peak ultra-wide tuning range mechanical modulation 
Design and optimization of an ultra-wide frequency range CMOS divide-by-two circuit
《Journal of Semiconductors》2010年第11期122-126,共5页陆波 梅年松 陈虎 洪志良 
Project supported by the National High Technology Research and Development Program of China(No.SQ2008AA01Z4473469)
A novel toggled flip-flop（TFF） divide-by-two circuit（DTC） and its optimization method based on a large-signal analysis approach are proposed.By reducing the output RC constant in tracking mode and making it large ...
关键词：TFF DTC PLL ultra-wide frequency range optimization method in-band phase noise 
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