METAL-OXIDE-SEMICONDUCTOR

作品数：60被引量：53H指数：3
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Temperature dependent interfacial and electrical characteristics during atomic layer deposition and annealing of HfO_2 films in p-GaAs metal–oxide–semiconductor capacitors被引量：2
《Journal of Semiconductors》2015年第12期87-90,共4页刘琛 张玉明 张义门 吕红亮 芦宾 
supported by the Advance Research Project of China(No.5130803XXXX);the National Natural Science Foundation of China(No.61176070)
We have investigated the temperature dependent interfacial and electrical characteristics of p-GaAs metal-oxide-semiconductor capacitors during atomic layer deposition （ALD） and annealing of HfO2 using the tetrakis ...
关键词：GaAs metal-oxide-semiconductor capacitor TEMPERATURE interface leakage current 
Investigation of the trigger voltage walk-in effect in LDMOS for high-voltage ESD protection
《Journal of Semiconductors》2014年第9期56-59,共4页梁海莲 董树荣 顾晓峰 钟雷 吴健 于宗光 
Project supported by the National Natural Science Foundation of China(Nos.61171038,61150110485);the Natural Science Foundation of Jiangsu Province(No.BK20130156);the Fundamental Research Funds for the Central Universities(Nos.JUSRP51323B,JUDCF13032);the Summit of the Six Top Talents Program of Jiangsu Province(Nos.DZXX-053 and DZXX-027);the Graduate Student Innovation Program for Universities of Jiangsu Province(No.CXLX13_747)
The trigger voltage walkin effect has been investigated by designing two different laterally diffused metal-oxide-semiconductor （LDMOS） transistors with an embedded silicon controlled rectifier （SCR）. By inserting...
关键词：electrostatic discharge laterally diffused metal-oxide-semiconductor silicon control rectifier triggervoltage walk-in effect 
Analysis of the subthreshold characteristics of vertical tunneling field effect transistors
《Journal of Semiconductors》2013年第1期28-34,共7页韩忠方 茹国平 阮刚 
Project supported by the International Research Training Group
Subthreshold characteristics of vertical tunneling field effect transistors（VTFETs） with an nC-pocket in the pC-source are studied by simulating the transfer characteristics with a commercial device simulator.Three ...
关键词：tunneling field effect transistor metal-oxide-semiconductor field effect transistor subthreshold swing 
Comparison of electron transmittances and tunneling currents in an anisotropic TiN_x/HfO_2/SiO_2/p-Si(100) metal-oxide-semiconductor(MOS) capacitor calculated using exponential- and Airy-wavefunction approaches and a transfer matrix method被引量：2
《Journal of Semiconductors》2010年第12期28-32,共5页Fatimah A.Noor Mikrajuddin Abdullah Sukirno Khairurrijal 
Analytical expressions of electron transmittance and tunneling current in an anisotropic TiNx/HfO2/SiO2/p-Si（100） metal-oxide-semiconductor （MOS） capacitor were derived by considering the coupling of transverse an...
关键词：Airy wavefunction anisotropic MOS exponential wavefunction transfer matrix method transmittance tunneling current 
Analysis of trigger behavior of high voltage LDMOS under TLP and VFTLP stress
《Journal of Semiconductors》2010年第1期30-33,共4页祝靖 钱钦松 孙伟锋 刘斯扬 
The physical mechanisms triggering electrostatic discharge （ESD） in high voltage LDMOS power transistors （〉 160 V） under transmission line pulsing （TLP） and very fast transmission line pulsing （VFTLP） stress ...
关键词：electrostatic discharge transmission line pulsing very fast transmission line pulsing lateral double-diffused metal-oxide-semiconductor transistor 
A High-Performance Silicon Electro-Optic Phase Modulator with a Triple MOS Capacitor被引量：2
《Journal of Semiconductors》2006年第12期2089-2093,共5页黄北举 陈弘达 刘金彬 顾明 刘海军 
国家自然科学基金(批准号:60536030,60502005);国家高技术研究发展计划(批准号:2005AA311030)资助项目~~
We propose and analyze a novel Si-based electro-optic modulator with an improved metal-oxide-semiconductor （MOS） capacitor configuration integrated into silicon-on-insulator （SOl）. Three gate-oxide layers embedded...
关键词：carrier accumulation plasma dispersion effect electro-optic phase modulator METAL-OXIDE-SEMICONDUCTOR optoelectronic integrated circuit 
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