NON-POLAR

作品数：31被引量：11H指数：2
导出分析报告
相关领域：理学更多>>
相关机构：东南大学更多>>
相关期刊：《Chemical Research in Chinese Universities》《Chinese Physics B》《Green Energy & Environment》《Open Journal of Veterinary Medicine》更多>>
相关基金：国家自然科学基金国家重点基础研究发展计划福建省自然科学基金中国博士后科学基金更多>>
-
在结果中检索

检索结果分析

结果分析中...
选择条件：
  • 期刊=Chinese Physics Lettersx
共 条 记 录，以下是1-3
全选清除导出
参考文献引证文献引用追踪
视图：
排序：
Surface Morphology Improvement of Non-Polar a-Plane Ga N Using a Low-Temperature GaN Insertion Layer
《Chinese Physics Letters》2020年第3期69-72,共4页Shen Yan Xiao-Tao Hu Jun-Hui Die Cai-Wei Wang Wei Hu Wen-Liang Wang Zi-Guang Ma Zhen Deng Chun-Hua Du Lu Wang Hai-Qiang Jia Wen-Xin Wang Yang Jiang Guoqiang Li Hong Chen 
Supported by the National Natural Science Foundation of China(Grant Nos.11574362 and 61704008)。
We demonstrate that a low-temperature Ga N insertion layer could significantly improve the surface morphology of non-polar a-plane Ga N.The two key factors in improving the surface morphology of non-polar a-plane Ga N...
关键词：INSERTION POLAR ROUGHNESS 
Morphological and Microstructural Evolution and Related Impurity Incorporation in Non-Polar a-Plane GaN Grown on r-Sapphire Substrates
《Chinese Physics Letters》2015年第9期154-157,共4页蒋仁渊 许晟瑞 张进成 姜腾 江海清 王之哲 樊永祥 郝跃 
Supported by the National Natural Science Foundation of China under Grant No 61204006;the Fundamental Research Funds for the Central Universities under Grant No K50511250002
Effects of the growth temperature on morphological and microstructural evolution of a-plane GaN films grown on r-plane sapphires by metal organic chemical vapor deposition are investigated by atomic force microscopy a...
关键词：GAN Morphological and Microstructural Evolution and Related Impurity Incorporation in Non-Polar a-Plane GaN Grown on r-Sapphire Substrates 
Strain Distributions in Non-Polar a-Plane In_(x)Ga_(1−x)N Epitaxial Layers on r-Plane Sapphire Extracted from X-Ray Diffraction
《Chinese Physics Letters》2013年第9期169-172,共4页ZHAO Gui-Juan YANG Shao-Yan LIU Gui-Peng LIU Chang-Bo SANG Ling GU Cheng-Yan LIU Xiang-Lin WEI Hong-Yuan ZHU Qin-Sheng WANG Zhan-Guo 
Supported by the National Natural Science Foundation of China under Grant Nos 91233111,61274041,11275228,61006004 and 61076001;the National Basic Research Program of China(No 2012CB619305);the National High-Technology R&D Program of China(No 2011AA03A101).
By using x-ray diffraction analysis,we investigate the major structural parameters such as strain state and crystal quality of non-polar a-plane In_(x)𝑦Ga_(1−x)𝑦N thin films grown on r-sapphire substrates by metalor...
关键词：technique deposition. PLANE 
全选清除导出
共1页<1>
检索报告 对象比较 聚类工具 使用帮助 返回顶部