SEMIPOLAR

作品数：11被引量：28H指数：2
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相关领域：电子电信理学更多>>
相关作者：孙钱更多>>
相关机构：中国科学院更多>>
相关期刊：《Chinese Physics Letters》《Chinese Physics B》《Opto-Electronic Advances》《Photonics Research》更多>>
相关基金：国家自然科学基金中国博士后科学基金国家高技术研究发展计划更多>>
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Band offset and electronic properties at semipolar plane Al N(1ī01)/diamond heterointerface
《Chinese Physics B》2018年第5期518-525,共8页Kong-Ping Wu Wen-Fei Ma Chang-Xu Sun Chang-Zhao Chen  Liu-Yi Ling Zhong-Gen Wang 
Project supported by the Scholarship Council of China(Grant No.201508340047);the Postdoctoral Science Foundation of China(Grant No.2016M601993);the Postdoctoral Science Foundation of Anhui Province,China(Grant No.2017B215);the Anhui Province University Outstanding Talent Cultivation Program,China(Grant No.gxfx ZD2016077)
Tailoring the electronic states of the Al N/diamond interface is critical to the development of the next-generation semiconductor devices such as the deep-ultraviolet light-emitting diode, photodetector, and high-powe...
关键词：DIAMOND HETEROINTERFACE charge transfer band offset 
Semipolar(1122) and polar(0001) InGaN grown on sapphire substrate by using pulsed metal organic chemical vapor deposition
《Chinese Physics B》2017年第2期467-472,共6页Sheng-Rui Xu Ying Zhao Ren-Yuan Jiang Teng Jiang Ze-Yang Ren Jin-Cheng Zhang Yue Hao 
Project supported by the National Natural Science Foundation of China(Grant Nos.61204006 and 61574108);the Fundamental Research Funds for the Central Universities,China(Grant No.7214570101)
High indium semipolar（1122） and polar（0001） In Ga N layers each with a thickness of about 100 nm are realized simultaneously on sapphire substrates by pulsed metal organic chemical vapor deposition（MOCVD）. The m...
关键词：semipolar GaN MOCVD 
Growth and fabrication of semi-polar InGaN/GaN multi-quantum well light-emitting diodes on microstructured Si(001) substrates
《Chinese Physics B》2015年第11期530-533,共4页陈龙 裴嘉鼎 史达特 李成 张建明 俞文杰 狄增峰 王曦 
Semi-polar （1 - 101 ） InGaN/GaN light-emitting diodes were prepared on standard electronic-grade Si （100） substrates. Micro-stripes of GaN and InGaN/GaN quantum wells on semi-polar facets were grown on intersectin...
关键词：metalorganic chemical vapor deposition SEMIPOLAR light emitting diodes 
Effect of pressure on the semipolar GaN(10-11) growth mode on patterned Si substrates
《Chinese Physics B》2015年第5期572-576,共5页刘建明 张洁 林文禹 叶孟欣 冯向旭 张东炎 Steve Ding 徐宸科 刘宝林 
support by the National High Technology Research and Development Program of China(Green Laser)
In this paper, we investigate the effect of pressure on the growth mode of high quality （10-11） GaN using an epi- taxial lateral over growth （ELO） technique by metal organic chemical vapor deposition （MOCVD）. Tw...
关键词：SEMIPOLAR PRESSURE metal-organic chemical vapor deposition 
Luminescence of a GaN grain with a nonpolar and semipolar plane in relation to microstructural characterization
《Chinese Physics B》2012年第6期520-524,共5页周小伟 许晟瑞 张进成 党纪源 吕玲 郝跃 郭立新 
Project supported by the Fundamental Research Funds for the Central Universities,China (Grant No. K50511250002);the National Key Science and Technology Special Project,China (Grant No. 2008ZX01002-002);the National Natural Science Foundation of China (Grant Nos. 60736033,60976068,and 61076097)
We report on the growth of the high-quality GaN grain on a r-plane sapphire substrate by using a self-organized SiN interlayer as a selective growth mask. Transmission electron microscopy, scanning electron microscopy...
关键词：NONPOLAR SEMIPOLAR GAN yellow luminescence 
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