PMOSFET

作品数：101被引量：107H指数：4
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相关机构：西安电子科技大学中国科学院中国科学院微电子研究所中国科学院新疆理化技术研究所更多>>
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Recovery of PMOSFET NBTI under different conditions被引量：1
《Chinese Physics B》2015年第9期484-488,共5页曹艳荣 杨毅 曹成 何文龙 郑雪峰 马晓华 郝跃 
Project supported by the National Basic Research Program of China(Grant No.2011CBA00606);the National Natural Science Foundation of China(Grant Nos.61404097,61334002,61106106,and 61176130);the Fundamental Research Funds for the Central Universities,China(Grant No.JB140415)
Negative bias temperature instability（NBTI） has become a serious reliability issue, and the interface traps and oxide charges play an important role in the degradation process. In this paper, we study the recovery o...
关键词：negative bias temperature instability（NBTI） P-type metal–oxide–semiconductor field effect transistor RECOVERY 
Effect of gate length on the parameter degradation relations of PMOSFET under NBTI stress
《Chinese Physics B》2014年第11期496-501,共6页曹艳荣 何文龙 曹成 杨毅 郑雪峰 马晓华 郝跃 
supported by the National Basic Research Program of China(Grant No.2011CBA00606);the National Natural Science Foundation of China(Grant Nos.61334002,61106106,and 61176130);the Fundamental Research Fund for the Central Universities of China(Grant No.JB140415)
The influence of PMOSFET gate length on the parameter degradation relations under negative bias temperature insta- bility （NBTI） stress is studied. The threshold voltage degradation increases with reducing the gate ...
关键词：negative bias temperature instability （NBTI） gate length DEGRADATION 
Hot carrier degradation and a new lifetime prediction model in ultra-deep sub-micron pMOSFET
《Chinese Physics B》2013年第4期434-437,共4页雷晓艺 刘红侠 张凯 张月 郑雪峰 马晓华 郝跃 
Project supported by the National Basic Research Program of China (Grant No. 2011CBA00606);the National Natural Science Foundation of China (Grant No. 61106106);the Fundamental Research Funds for the Central Universities, China (Grant No. K50510250006)
The hot carrier effect （HCE） of an ultra-deep sub-micron p-channel metal–oxide semiconductor field-effect transistor （pMOSFET） is investigated in this paper. Experiments indicate that the generation of positively...
关键词：PMOSFETS hot carrier effect （HCE） DEGRADATION lifetime modeling 
The effect of substrate doping on the flatband and threshold voltages of a strained-Si pMOSFET被引量：1
《Chinese Physics B》2013年第2期539-544,共6页王斌 张鹤鸣 胡辉勇 张玉明 周春宇 王冠宇 李妤晨 
Project supported by the Funds from the National Ministries and Commissions (Grant Nos. 51308040203 and 6139801);the Fundamental Research Funds for the Central Universities (Grant Nos. 72105499 and 72104089);the Natural Science Basic Research Plan in Shaanxi Province of China (Grant No. 2010JQ8008)
The effect of substrate doping on the flatband and threshold voltages of a strained-Si/SiGe p metal-oxide semiconductor field-effect transistor（pMOSFET） has been studied.By physically deriving the models of the flat...
关键词：strained-Si pMOSFET flatband voltage threshold voltage DOPING 
An analytical threshold voltage model for dual-strained channel PMOSFET被引量：1
《Chinese Physics B》2010年第11期608-614,共7页秦珊珊 张鹤鸣 胡辉勇 戴显英 宣荣喜 舒斌 
Project supported by the National Defence Pre-research Foundation of China (Grant Nos. 51308040203,9140A08060407DZ0103,and 6139801)
Based on the analysis of vertical electric potential distribution across the dual-channel strained p-type Si/strained Si1-xGex/relaxd Si1-yGey（s-Si/s-SiGe/Si1-yGey） metal-oxide-semiconductor field-effect transistor ...
关键词：strained Si strained SiGe dual-channel metal-oxide-semiconductor field-effect transistor （MOSFET） threshold voltage 
The role of hydrogen in negative bias temperature instability of pMOSFET
《Chinese Physics B》2006年第4期833-838,共6页李忠贺 刘红侠 郝跃 
Project supported by the National Natural Science Foundation of China （Grant No 60206006）, the Hi-Tech Research ＆ Development Program of China （Grant No 2004AA1Z1070） and the Key Project of Chinese Ministry of Education （Grant No 104172）.
The NBTI degradation phenomenon and the role of hydrogen during NBT stress are presented in this paper. It is found that PBT stress can recover a fraction of Vth shift induced by NBT1. However, this recovery is unstab...
关键词：negative bias temperature instability device degradation hydrogen diffusion interface traps 
Effect of the technology of implanting nitrogen into buried oxide on the radiation hardness of the top gate oxide for partially depleted SOI PMOSFET
《Chinese Physics B》2005年第3期565-570,共6页郑中山 刘忠立 张国强 李宁 范楷 张恩霞 易万兵 陈猛 王曦 
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