ELECTROABSORPTION

作品数：9被引量：2H指数：1
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相关机构：清华大学更多>>
相关期刊：《Science China Chemistry》《Chinese Physics Letters》《Chinese Optics Letters》《Optics and Photonics Journal》更多>>
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Record-high near-band-edge optical nonlinearities and two-level model correction of poled polymers by spectroscopic electromodulation and ellipsometry
《Science China Chemistry》2022年第3期584-593,共10页Taili Liu Di Zhang Md Rashedul Huqe Wen Wang Juan Antonio Zapien Sai-Wing Tsang Jingdong Luo 
supported by the Fundamental Research Project Funding from Shenzhen Science & Technology Innovation Committee (JCYJ20180507181718203);the National Natural Science Foundation of China (21975213);the Research Grants Council (RGC) of Hong Kong (11306320, 11303618, 11210218);the City University of Hong Kong (9610389, 9680263, 9610454);the Innovation and Technology Commission of Hong Kong (ITS/461/18)。
The determination of nonlinearities near the band edge of organic and polymeric electro-optic(EO)materials is important from the viewpoint of molecular nonlinear optics(NLO)and photonic device applications.Based on tr...
关键词：poled polymers ELECTROABSORPTION electro-optic effect second-order nonlinear susceptibilities 
Fabrication of 32 Gb/s Electroabsorption Modulated Distributed Feedback Lasers by Selective Area Growth Technology
《Chinese Physics Letters》2015年第5期66-68,共3页周代兵 王会涛 张瑞康 王宝军 边静 安欣 陆丹 赵玲娟 朱洪亮 吉晨 王圩 
Supported by the National High-Technology Research and Development Program of China under Grant Nos 2011AA010303and 2012AA012203;the National Basic Research Program of China under Grant No 2011CB301702;the National Natural Science Foundation of China under Grant Nos 61321063 and 6132010601
A 32 Gb/s monolithically integrated electroabsorption modulated laser is fabricated by selective area growth technology. The threshold current of the device is below 13mA. The output power exceeds 10mW at 0V bias when...
关键词：Fabrication of 32 Gb/s Electroabsorption Modulated Distributed Feedback Lasers by Selective Area Growth Technology EML EAM DFB InGaAs SAG 
Proposed Model of Electric Field Effects in High-Purity GaAs at Room Temperature
《Optics and Photonics Journal》2014年第5期99-103,共5页Durga Prasad Sapkota Madhu Sudan Kayastha Makoto Takahashi Koichi Wakita 
We have proposed a new model for the calculation of excitonic electroabsorption based on modified previously reported models for bulk structure. The excitonic absorption spectra in high purity GaAs have been theoretic...
关键词：OPTOELECTRONICS ELECTROABSORPTION MODULATOR 
Strain effects on performance of electroabsorption optical modulators
《Frontiers of Optoelectronics》2013年第3期282-289,共8页Kambiz ABEDI 
This paper reports a detailed theoretical investigation of strain effects on the performance of electroabsorption optical modulators based on the asym- metric intra-step-barrier coupled double strained quantum wells ...
关键词：asymmetric intra-step-barrier coupled double strained quantum wells （AICD-SQWs） electroabsorption modulators strain insertion loss 
High speed optical modulation in Ge quantum wells using quantum confined stark effect
《Frontiers of Optoelectronics》2012年第1期82-89,共8页Yiwen RONG Yijie HUO Edward T.FE Marco FIORENTINO Michael R.T.TAN Tomasz OCHALSKI Guillaume HUYET Lars THYLEN Marek CHACINSKI Theodore I.KAMINS James S.HARRIS 
We focus on the optimization of SiGe material deposition, the minimization of the parasitic capacitance of the probe pads for high speed, low voltage and high contrast ratio operation. The device fabrication is based ...
关键词：electroabsorption effect Ge optical intercon-nections optical modulators quantum-confined Stark effect（QCSE） Ge/SiGe quantum wells （QWs） 
Ground State of a Polaron in a Symmetric Triangular Quantum Well
《Chinese Physics Letters》2006年第8期2198-2201,共4页张继业 梁希侠 
Supported by the Specialized Research Fund for the Doctoral Programme of Higher Education of China under Grant No 20040126003, and the Natural Science Foundation of Inner Mongol of China under Grant No 200408020101.
We study the effects of electron-phonon interaction on the electron ground state in a symmetric triangular quantum well, and calculate the ground state energy of an electron in the GaAs/Al0.96Ga0.04As triangular quant...
关键词：ELECTROABSORPTION PHONONS ENERGY 
A 10-GHz Bandwidth Electroabsorption Modulated Laser by Ultra-Low-Pressure Selective Area Growth
《Chinese Physics Letters》2005年第8期2016-2019,共4页赵谦 潘教青 周帆 王宝军 王鲁峰 王圩 
Integrated electroabsorption-modulated DFB laser by using an improved butt-joint method被引量：2
《Chinese Optics Letters》2004年第4期226-228,共3页李宝霞 胡小华 朱洪亮 王宝军 赵玲娟 王圩 
This work was supported by the National "973" Project of China (No. G20000683-1);the National "863" Project of China (No. 2001AA312050);the National Natural Science Foundation of China (No. 90101023).
An improved butt coupling method is used to fabricate an electroabsorption modulator (EAM) monolithically integrated with a distributed feedback (DFB) laser.The obtained electroabsorption-modulated laser (EML) chip wi...
关键词：Electron absorption Modulators 
Electroabsorption spectrum of substituted polyphenylacetylenes
《Chinese Science Bulletin》1998年第14期1215-1219,共5页CHENG Xiaoman Department of Optoelectronic Information Engineering, Tianjin Institute of Technology, Tianjin 300191, China 
Electroabsorption (EA) measurements on thin films of poly[ o (trimethylsilyl) phenylacetylene] and poly[ o (trimethylsilylmethyl) phenylacetylene] have been performed. The spectral change induced by an exernal electri...
关键词：SUBSTITUTED polyphenylacetylenes ELECTROABSORPTION SPECTRUM OPTICAL NONLINEARITIES 
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