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作品数:586被引量:621H指数:10
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相关作者:张学利路妍王茹解金沙张晓波更多>>
相关机构:中国农业大学沈阳师范大学北京航空航天大学东南大学更多>>
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Large-scale synthesis of polyynes with commercial laser marking technology
《Chinese Physics B》2022年第12期425-428,共4页Liang Fang Yanping Xie Shujie Sun Wei Zi 
Project supported by the Nanhu Scholars Program for Young Scholars of Xinyang Normal University
The space-confined synthesis method has been an efficient way for the preparation of linear carbon chains.However,the large-scale preparation of linear carbon chains still faces many challenges due to the lack of meth...
关键词:POLYYNES carbon chains single-walled carbon nanotubes 
Fiber-based joint time and frequency dissemination via star-shaped commercial telecommunication network被引量:1
《Chinese Physics B》2017年第8期96-101,共6页袁一博 王波 王力军 
supported by the National Key Scientific Instrument and Equipment Development Project,China(Grant No.2013YQ09094303);the Program of International Science and Technology Cooperation,China(Grant No.2016YFE0100200)
A fiber-based, star-shaped joint time and frequency dissemination scheme is demonstrated. By working in cooperation with the existing commercial telecommunication network. Our scheme enables the frequency, time, and d...
关键词:time synchronization telecommunication network frequency transfer star-shaped network 
Analysis of functional failure mode of commercial deep sub-micron SRAM induced by total dose irradiation
《Chinese Physics B》2015年第10期380-385,共6页郑齐文 崔江维 周航 余德昭 余学峰 陆妩 郭旗 任迪远 
Functional failure mode of commercial deep sub-micron static random access memory(SRAM) induced by total dose irradiation is experimentally analyzed and verified by circuit simulation. We extensively characterize th...
关键词:total dose irradiation static random access memory functional failure mode 
Total dose radiation response of modified commercial silicon-on-insulator materials with nitrogen implanted buried oxide被引量:2
《Chinese Physics B》2012年第11期361-366,共6页郑中山 刘忠立 于芳 李宁 
Nitrogen ions of various doses are implanted into the buried oxide (BOX) of commercial silicon-on-insulator (SOI) materials, and subsequent annealings are carried out at various temperatures. The total dose radiat...
关键词:SILICON-ON-INSULATOR total dose radiation hardness nitrogen implantation 
Synergistic effects of neutron and gamma ray irradiation of a commercial CHMOS microcontroller
《Chinese Physics B》2010年第6期429-436,共8页金晓明 范如玉 陈伟 林东生 杨善潮 白小燕 刘岩 郭晓强 王桂珍 
This paper presents the experimental results of a combined irradiation environment of neutron and gamma rays on 80C196KC20, which is a 16-bit high performance member of the MCS96 microcontroller family. The electrical...
关键词:total ionizing dose neutron irradiation synergistic effect MICROCONTROLLER 
Study of total ionizing dose radiation effects on enclosed gate transistors in a commercial CMOS technology被引量:1
《Chinese Physics B》2007年第12期3760-3765,共6页李冬梅 王志华 皇甫丽英 勾秋静 
Project supported by the National Natural Science Foundation of China (Grant No 6037202/F010204).
This paper studies the total ionizing dose radiation effects on MOS (metal-oxide-semiconductor) transistors with normal and enclosed gate layout in a standard commercial CMOS (compensate MOS) bulk process. The lea...
关键词:MOS transistors radiation effects total dose layout 
A novel technique for predicting ionizing radiation effects of commercial MOS devices被引量:1
《Chinese Physics B》2004年第6期948-953,共6页张国强 郭旗 艾尔肯 陆妩 任迪远 
A simple method for boosting the beam quality of commercial DPL
《Chinese Physics B》2003年第12期1414-1416,共3页张光寅 焦志勇 颜彩繁 丁欣 张潮波 张晓华 顾学文 宋峰 
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