SEMI-INSULATING

作品数：34被引量：18H指数：2
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相关领域：电子电信更多>>
相关作者：赵有文林兰英王超张玉明张义门更多>>
相关机构：中国科学院河北半导体研究所香港大学西安电子科技大学更多>>
相关期刊：《Chinese Physics Letters》《Journal of Energy and Power Engineering》《Science Bulletin》《Science China(Information Sciences)》更多>>
相关基金：国家自然科学基金国家重点基础研究发展计划天津市自然科学基金中国博士后科学基金更多>>
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  • 期刊=Journal of Rare Earthsx
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Growth of High Quality Semi-Insulating InP Single Crystal by Suppression of Compensation Defects
《Journal of Rare Earths》2006年第z1期75-77,共3页Zhao Youwen Dong Zhiyuan Duan Manlong Sun Wenrong Yang Zixiang 
Deep level defects in as-grown and annealed SI-InP samples were investigated by thermally stimulated current spectroscopy. Correlations between electrical property, compensation ratio, thermal stability and deep defec...
关键词：INDIUM PHOSPHIDE DEFECT semi-insualting 
Growth and Characterization of Semi-Insulating GaN Films Grown by MOCVD
《Journal of Rare Earths》2006年第z1期14-18,共5页Fang Cebao Wang Xiaoliang Hu Guoxin Wang Junxi Wang Cuimei Li Jinmin 
Project supported by Special Funds for Major State Basic Research Project (G20000683 and 2002CB311903); National Natural Science Foundation of China (60136020); Key Innovation Program of Chinese Academy of Science and National High Technology R&D Program of China (2002AA305304)
High resistivity unintentionally doped GaN films were grown on (0001) sapphire substrates by metalorganic chemical vapor deposition. The surface morphology of the layer was measured by both atomic force microscopy and...
关键词：MOCVD GAN RESISTIVITY TSC 
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