Project supported by the National Basic Research Program of China(Grant No.2011CBA00606);the National Natural Science Foundation of China(Grant No.61106106)
The degradation produced by hot carrier (HC) in ultra-deep sub-micron n-channel metal oxide semiconductor field effect transistor (nMOSFET) has been analyzed in this paper. The generation of negatively charged int...
In this paper based on the forward gated-diode configuration, the hot carrier behavior of the SOI (Silicon-on-insulator) nMOSFET's operating in a Bi-MOS hybrid mode (abbreviated as Bi-nMOSFET) is investigated. The per...