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Nano-scale gap filling and mechanism of deposit-etch-deposit process for phase-change material被引量：1
《Chinese Physics B》2012年第11期335-339,共5页任万春 刘波 宋志棠 向阳辉 王宗涛 张北超 封松林 
Project supported by the National Basic Research Program of China (Grant Nos.2010CB934300,2011CBA00607,and 2011CB932800);the National Integrate Circuit Research Program of China (Grant No. 2009ZX02023-003);the National Natural Science Foundation of China (Grant Nos. 60906004,60906003,61006087,and 61076121);the Science and Technology Council of Shanghai,China (Grant No. 1052nm07000)
Ge2Sb2Te5 gap filling is one of the key processes for phase-change random access memory manufacture. Physical vapor deposition is the mainstream method of Ge2Sb2Te5 film deposition due to its advantages of film qualit...
关键词：deposit-etch deposit process single step deposit gap filling RE-DEPOSITION 
Etch characteristics of Si_(1-x)Ge_x films in HNO_3:H_2O:HF被引量：1
《Science China(Technological Sciences)》2011年第10期2802-2807,共6页XUE ZhongYing WEI Xing LIU LinJie CHEN Da ZHANG Bo ZHANG Miao WANG Xi 
supported by the National Natural Science Foundation of China (Grant No. 61006088);the National Basic Research Program of China (973 Program) (Grant No. 2010CB832906);the Natural Sci-ence Foundation of Shanghai (Grant No. 10ZR1436100)
The etch characteristics of Si_1-xGex films in HNO3:H2O:HF were examined. The etch rate ratio (etch selectivity) between Si_1-xGex and Si escalated with the growth of HNO3 concentration at low concentration level, and...
关键词：Si_（1-x）Ge_x etch rate SELECTIVITY HNO_3 HF 
Etching Effect on CMP of Different GaN Layers
《稀有金属材料与工程》2011年第S3期276-280,共5页Siche Dietmar Rost Hans-Joachim Schulz Tobias Albrecht Martin 
National Natural Science Foundation of China (50472068, 50721002);National "863" High Technology Research and Development Program of China (2006AA03A145, 2007AA03Z405);National Basic Research Program of China (2009CB930503);The Cultivation Fund of the Key Scientific and Technical Innovation Project, Ministry of Education of China (707039)
Chemical mechanical polishing (CMP) was used to etch various GaN materials, such as GaN layers on sapphire and silicon carbide substrates grown by metal-organic chemical vapor deposition and thick GaN layers grown by ...
关键词：SURFACE ETCH PITS CMP GAN 
Gate oxide punching thru mechanism in plasma dry etching
《Science China(Technological Sciences)》2008年第11期1990-1994,共5页ZHANG QingZhao XIE ChangQing LIU Ming LI Bing CHEN BaoQin ZHU XiaoLi 
the National High-Tech Research and Development Program of China ("863" Project) (Grant No. 2006AA843134);the National Basic Research Program of China ("973" Project) (Grant No. 2007CB935302)
The punching thru mechanism of gate oxide (thickness about 15A) was investi- gated. Because of the thin thickness of gate oxide, gate oxide punching thru may easily happen during the plasma process. It was found that ...
关键词：PLASMA ETCH PUNCH thru GATE OXIDE 
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