SNAPBACK

作品数：24被引量：35H指数：3
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相关领域：电子电信更多>>
相关作者：郝跃陈万军张波马晓华朱志炜更多>>
相关机构：电子科技大学西安电子科技大学中国电子科技集团第五十八研究所江南大学更多>>
相关期刊：《Chinese Journal of Electronics》《Journal of Civil Engineering and Architecture》《Research》《物理学报》更多>>
相关基金：国家自然科学基金北京市自然科学基金重庆市自然科学基金中国博士后科学基金更多>>
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A 4H-SiC merged P–I–N Schottky with floating back-to-back diode被引量：2
《Chinese Physics B》2022年第2期660-664,共5页Wei-Zhong Chen Hai-Feng Qin Feng Xu Li-Xiang Wang Yi Huang Zheng-Sheng Han 
A novel 4 H-Si C merged P–I–N Schottky(MPS)with floating back-to-back diode(FBD),named FBD-MPS,is proposed and investigated by the Sentaurus technology computer-aided design(TCAD)and analytical model.The FBD feature...
关键词：4H-SIC merged P-I-N Schottky(MPS) snapback effect turnover voltage floating back-to-back diode(FBD) 
New DDSCR structure with high holding voltage for robust ESD applications被引量：1
《Chinese Physics B》2021年第3期529-539,共11页Zi-Jie Zhou Xiang-Liang Jin Yang Wang Peng Dong 
Project supported by the National Natural Science Foundation of China(Grant Nos.61774129,61827812,and 61704145);the Huxiang High-level Talent Gathering Project from the Hunan Science and Technology Department,China(Grant No.2019RS1037);the Changsha Science and Technology Plan Key Projects,China(Grant Nos.kq1801035 and kq1703001).
A novel dual direction silicon-controlled rectifier(DDSCR)with an additional P-type doping and gate(APGDDSCR)is proposed and demonstrated.Compared with the conventional low-voltage trigger DDSCR(LVTDDSCR)that has posi...
关键词：dual direction silicon-controlled rectifier(DDSCR) failure current snapback gate voltage simulation transmission line pulsing(TLP) 
Snapback-free shorted anode LIGBT with controlled anode barrier and resistance
《Chinese Physics B》2021年第2期557-562,共6页Shun Li Jin-Sha Zhang Wei-Zhong Chen Yao Huang Li-Jun He Yi Huang 
Project supported by the National Natural Science Foundation of China(Grant Nos.61604027 and 61704016);the Fund from Chongqing Technology Innovation and Application Development(Key Industry Research and Development),China(Grant No.cstc2018jszx-cyzd0646)。
A novel shorted anode lateral-insulated gate bipolar transistor(SA LIGBT)with snapback-free characteristic is proposed and investigated.The device features a controlled barrier V_(barrier)and resistance R_(SA)in anode...
关键词：shorted anode lateral-insulated gate bipolar transistor SNAPBACK BARRIER trade-off 
A snapback-free TOL-RC-LIGBT with vertical P-collector and N-buffer design
《Chinese Physics B》2018年第8期627-632,共6页Weizhong Chen Yao Huang Lijun He Zhengsheng Han Yi Huang 
Project supported by the National Natural Science Foundation of China(Grant No.61604027);the Basic and Advanced Technology Research Project of Chongqing Municipality,China(Grant No.cstc2016jcyj A1923);the Scientific and Technological Research Foundation of Chongqing Municipal Education Commission,China(Grant No.KJ1500404);the Youth Natural Science Foundation of Chongqing University of Posts and Telecommunications,China(Grant Nos.A2015-50 and A2015-52);the Chongqing Key Laboratory Improvement Plan,China(Chongqing Key Laboratory of Photo Electronic Information Sensing and Transmitting Technology)(Grant No.cstc2014pt-sy40001);the University Innovation Team Construction Plan Funding Project of Chongqing,China(Architecture and Core Technologies of Smart Medical System)(Grant No.CXTDG201602009)
A reverse-conducting lateral insulated-gate bipolar transistor （NI.2-LltJlS｜） with a trench oxide layer （IUL）, teaturlng a vertical N-buffer and P-collector is proposed. Firstly, the TOL enhances both of the surf...
关键词：reverse-conducting lateral insulated-gate bipolar transistor （RC-LIGBT） breakdown voltage snapback phenomenon 
A snapback suppressed reverse-conducting IGBT with uniform temperature distribution被引量：2
《Chinese Physics B》2014年第1期513-518,共6页刘念 罗小光 章毛连 
Project supported by the National Science and Technology Major Project, China （Grant No. 2011ZX02504-003）, the National Natural Science Foundation of China （Grant No. 61076082）, and the Fundamental Research Funds for the Central Universities, China （Grant No. ZYGX2011 J024）.
A novel reverse-conducting insulated-gate bipolar transistor （RC-IGBT） featuring a floating P-plug is proposed. The P-plug is embedded in the n-buffer layer to obstruct the electron current from flowing directly to ...
关键词：reverse-conducting insulated-gate BIPOLAR transistor snapback temperature reliability 
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