云南高校图书馆联盟文献共享服务平台- OMI

OMI: 作品数：492被引量：1383H指数：22; 导出分析报告; 相关领域：环境科学与工程医药卫生更多>>; 相关作者：巨天珍赵晓琴刘旻霞张斌才孙君志更多>>; 相关机构：西北师范大学中国科学院中国科学院大学北京体育大学更多>>; 相关期刊：更多>>; 相关基金：国家自然科学基金国家重点基础研究发展计划国家高技术研究发展计划中央高校基本科研业务费专项资金更多>>

Atomic-level quantitative analysis of electronic functional materials by aberration-corrected STEM: 《Chinese Physics B》2024年第11期12-25,共14页Wanbo Qu Zhihao Zhao Yuxuan Yang Yang Zhang Shengwu Guo Fei Li Xiangdong Ding Jun Sun Haijun Wu; Project supported by the financial support from the National Key R&D Program of China(Grant No.2021YFB3201100);the National Natural Science Foundation of China(Grant No.52172128);the Top Young Talents Programme of Xi’an Jiaotong University.; The stable sub-angstrom resolution of the aberration-corrected scanning transmission electron microscope(ACSTEM)makes it an advanced and practical characterization technique for all materials.Owing to the prosperous a...; 关键词：AC-STEM quantitative analysis POLARIZATION electronic functional materials

Accurate prediction method for the microstructure of amorphous alloys without non-metallic elements: 《Chinese Physics B》2021年第11期440-444,共5页Wei Zhao Jia-Lin Cheng Gong Li Xin Wang; Project supported by Excellent Youth Foundation of Jiangsu Scientific Committee,China(Grant No.BK20180106);the National Natural Science Foundation of China(Grant No.51804091);Industry-University-Research Cooperation Project of Jiangsu Province,China(Grant No.BY2020383);Opening Project of State Key Laboratory of Metastable Materials Science and Technology(Grant No.201910).; A new structural parameter of amorphous alloys called atomic bond proportion was proposed, and a topological algorithm for the structural parameter was proven feasible in the previous work. In the present study, a cor...; 关键词：atomic bond proportion correction factor amorphous materials MICROSTRUCTURE

Atomic-level characterization of liquid/solid interface: 《Chinese Physics B》2020年第11期25-36,共12页Jiani Hong Ying Jiang; The detailed understanding of various underlying processes at liquid/solid interfaces requires the development of interface-sensitive and high-resolution experimental techniques with atomic precision.In this perspecti...; 关键词：liquid/solid interface atomic scale scanning tunneling microscope(STM) atomic force microscopy(AFM)

Observation of oscillations in the transport for atomic layer MoS_2: 《Chinese Physics B》2018年第2期602-606,共5页解晓强彭英姿郑奇烨李源陈吉; Project supported by the Zhejiang Provincial Natural Science Foundation,China(Grant Nos.LY16F040003 and LY16A040007);the National Natural Science Foundation of China(Grant Nos.51401069 and 11204058); In our experiment, an atomic layer MoS2structure grown on SiO2/Si substrates is used in transport test. The voltage U14,23 oscillates and the corresponding period varies with applied current. The largest period appear...; 关键词：atomic-layer MoS2 oscillations in the transport circular polarized light photo-excited carriers

Crystalline silicon surface passivation investigated by thermal atomic-layer-deposited aluminum oxide被引量：1: 《Chinese Physics B》2017年第9期478-482,共5页侯彩霞郑新和贾锐陶科刘三姐姜帅张鹏飞孙恒超李永涛; Project supported by the Beijing Municipal Science and Technology Commission,China(Grant No.Z151100003515003);the National Natural Science Foundation of China(Grant Nos.110751402347,61274134,51402064,61274059,and 51602340);the University of Science and Technology Beijing(USTB)Start-up Program,China(Grant No.06105033);the Beijing Municipal Innovation and Research Base,China(Grant No.Z161100005016095);the Fundamental Research Funds for the Central Universities,China(Grant Nos.FRF-UM-15-032 and 06400071);the Youth Innovation Promotion Association of Chinese Academy of Sciences(Grant No.2015387); Atomic-layer-deposited（ALD） aluminum oxide（Al2O3） has demonstrated an excellent surface passivation for crystalline silicon（c-Si） surfaces, as well as for highly boron-doped c-Si surfaces. In this paper, water-b...; 关键词：atomic layer deposition Al_2O_3 surface passivation effective minority carrier lifetime

Atomic-layer-deposited Al_2O_3 and HfO_2 on InAlAs: A comparative study of interfacial and electrical characteristics被引量：3: 《Chinese Physics B》2016年第10期459-463,共5页武利翻张玉明吕红亮张义门; supported by the National Basic Research Program of China(Grant No.2010CB327505);the Advanced Research Foundation of China(Grant No.914xxx803-051xxx111);the National Defense Advance Research Project,China(Grant No.513xxxxx306);the National Natural Science Foundation of China(Grant No.51302215);the Scientific Research Program Funded by Shaanxi Provincial Education Department,China(Grant No.14JK1656);the Science and Technology Project of Shaanxi Province,China(Grant No.2016KRM029); Al2O3and HfO2thin films are separately deposited on n-type InAlAs epitaxial layers by using atomic layer deposition(ALD).The interfacial properties are revealed by angle-resolved x-ray photoelectron spectroscopy(AR-XP...; 关键词：high-k dielectric atomic layer deposition In Al As characteristics

Characterization of atomic-layer MoS_2 synthesized using a hot filament chemical vapor deposition method被引量：1: 《Chinese Physics B》2016年第5期423-428,共6页彭英姿宋扬解晓强李源钱正洪白茹; Project supported by the Natural Science Foundation of Zhejiang Province,China(Grant Nos.LY16F040003 and LY16A040007);the National Natural Science Foundation of China(Grant Nos.51401069 and 11574067); Atomic-layer MoS_2 ultrathin films are synthesized using a hot filament chemical vapor deposition method. A combination of atomic force microscopy（AFM）, x-ray diffraction（XRD）, high-resolution transition electron ...; 关键词：atomic-layer MoS2 hot filament chemical vapor deposition high-resolution transition electron microscopy（HRTEM） x-ray photoelectron spectroscopy（XPS）

Growth mechanism of atomic-layer-deposited TiAlC metal gate based on TiCl4 and TMA precursors被引量：2: 《Chinese Physics B》2016年第3期371-374,共4页项金娟丁玉强杜立永李俊峰王文武赵超; Project supported by the Key Technology Study for 16/14 nm Program of the Ministry of Science and Technology of China(Grant No.2013ZX02303); TiAIC metal gate for the metal-oxide-semiconductor field-effect-transistor （MOSFET） is grown by the atorr/ic layer deposition method using TiCI4 and AI（CH3） 3 （TMA） as precursors. It is found that the major PrOd...; 关键词：atomic layer deposition metal gate TiAIC reaction mechanism

Low voltage program-erasable Pd-Al_2O_3-Si capacitors with Ru nanocrystals for nonvolatile memory application: 《Chinese Physics B》2013年第11期532-535,共4页蓝澜苟鸿雁丁士进张卫; Project supported by the National Key Technology Research and Development Program of China(Grant No.2009ZX02302-002);the National Natural Science Foundation of China(Grant No.61274088);the Program for New Century Excellent Talents in University of Ministry of Education of China(Grant No.NCET-08-0127); Pd-Al2O3-Si capacitors with Ru nanocrystals are fabricated and electrically characterized for nonvolatile memory application. While keeping the entire insulator Al2O3 thickness fixed, the memory window has a strong de...; 关键词：metal-oxide-semiconductor capacitors nonvolatile memory Ru nanocrystals atomic-layer-deposition

A study of GaN MOSFETs with atomic-layer-deposited Al_2O_3 as the gate dielectric: 《Chinese Physics B》2012年第1期453-457,共5页Feng Qian Xing Tao Wang Qiang Feng Qing Li Qian Bi Zhi-Wei Zhang Jin-Cheng Hao Yue; Accumulation-type GaN metal-oxide-semiconductor field-effect transistors （MOSFETs） with atomic-layer- deposited A1203 gate dielectrics are fabricated. The device, with atomic-layer-deposited A1203 as the gate dielec...; 关键词：gallium nitride metal-oxide-semiconductor field-effect transistor atomic-layer deposi-tion aluminium oxide

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