OXIDE

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Effect of Oxide Content of Graphene Oxide Membrane on Remarkable Adsorption for Calcium Ions
《Chinese Physics Letters》2021年第10期22-24,共3页Jie Jiang Long Yan Haiping Fang 
Supported by the National Natural Science Foundation of China (Grant No. 11675246)
Graphene oxide membranes(GOMs),as one of the most promising novel materials,have gained great interest in the field of adsorption.However,the oxygen content of graphene oxide is directly related to its adsorption prop...
关键词：ADSORPTION STABILITY ADSORPTION 
Ultrathin Al Oxide Seed Layer for Atomic Layer Deposition of High-κ Al2O3 Dielectrics on Graphene
《Chinese Physics Letters》2020年第7期80-85,共6页Hang Yang Wei Chen Ming-Yang Li Feng Xiong Guang Wang Sen Zhang Chu-Yun Deng Gang Peng Shi-Qiao Qin 
Supported by Strengthening Project of Science and Technology Commission Foundation under Grant No.2019JCJQZD。
Due to the lack of surface dangling bonds in graphene,the direct growth of high-κ films via atomic layer deposition(ALD) technique often produces the dielectrics with a poor quality,which hinders its integration in m...
关键词：BONDS utilizing CONVENIENT 
Van der Waals Epitaxy of Anatase TiO2 on mica and Its Application as Buffer Layer
《Chinese Physics Letters》2019年第7期107-110,共4页Han Xu Zhen-Lin Luo Chang-Gan Zeng Chen Gao 
Supported by the National Key Research and Development Program of China under Grant No 2016YFA0300102;the National Natural Science Foundation of China under Grant Nos 11675179,11434009 and 11374010;the Fundamental Research Funds for the Central Universities under Grant No WK2340000065
MICAtronics, based on the functional oxide/mica heterostructures, has recently attracted much attention due to its potential applications in transparent, flexible electronics and devices. However, the weak van der Waa...
关键词：MICAtronics oxide/mica HETEROSTRUCTURES functional OXIDES on MICA 
Total Ionizing Dose Effects of 55-nm Silicon-Oxide-Nitride-Oxide-Silicon Charge Trapping Memory in Pulse and DC Modes被引量：1
《Chinese Physics Letters》2018年第7期130-133,共4页李梅 毕津顺 徐彦楠 李博 习凯 王海滨 刘璟 李金 季兰龙 骆丽 刘明 
Supported by the National Natural Science Foundation of China under Grant No 616340084;the Youth Innovation Promotion Association of Chinese Academy of Sciences under Grant No 2014101;the Austrian-Chinese Cooperative R&D Projects of International Cooperation Project of Chinese Academy of Sciences under Grant No 172511KYSB20150006
The （60）Co-γ ray total ionizing dose radiation responses of 55-nm silicon-oxide-nitride-oxide-silicon（SONOS） memory cells in pulse mode（programmed/erased with pulse voltage） and dc mode（programmed/erased with ...
Effects of Fe-Oxide and Mg Layer Insertion on Tunneling Magnetoresistance Properties of CoFeB/MgO/CoFeB Magnetic Tunnel Junctions
《Chinese Physics Letters》2016年第11期124-126,共3页娄永乐 张玉明 郭辉 徐大庆 张义门 
Supported by the National Defense Advance Research Foundation under Grant No 9140A08XXXXXX0DZ106;the Basic Research Program of Ministry of Education of China under Grant No JY10000925005;the Scientific Research Program Funded by Shaanxi Provincial Education Department under Grant No 11JK0912;the Scientific Research Foundation of Xi'an University of Science and Technology under Grant No 2010011;the Doctoral Research Startup Fund of Xi'an University of Science and Technology under Grant No 2010QDJ029
To study the influence of CoFeB/MgO interface on tunneling magnetoresistance （TMR）, different structures of magnetic tunnel junctions （MTJs） are successfully prepared by the magnetron sputtering technique and char...
关键词：MGO of TMR FE Effects of Fe-Oxide and Mg Layer Insertion on Tunneling Magnetoresistance Properties of CoFeB/MgO/CoFeB Magnetic Tunnel Junctions in is that on 
Impact of Native Defects in the High Dielectric Constant Oxide HfSiO_4 on MOS Device Performance被引量：2
《Chinese Physics Letters》2016年第1期92-95,共4页董海宽 史力斌 
Supported by the Science Foundation from Education Department of Liaoning Province under Grant No L2014445
Native dejects in HfSiO4 are investigated by first principles calculations. Transition levels of native detects can be accurately described by employing the nonlocal HSE06 hybrid functional. This methodology overcomes...
关键词：MOS SI of Impact of Native Defects in the High Dielectric Constant Oxide HfSiO4 on MOS Device Performance GAAS in on 
Polarization-Stable 980 nm Vertical-Cavity Surface-Emitting Lasers with Diamond-Shaped Oxide Aperture被引量：1
《Chinese Physics Letters》2015年第4期58-61,共4页武华 李冲 韩明夫 王文娟 史磊 刘巧莉 刘白 董建 郭霞 
Supported by the National Natural Science Foundation of China under Grant Nos 61222501 and 61335004;the Specialized Research Fund for the Doctoral Program of Higher Education of China under Grant No 20111103110019
Polarization-stable 980 nm oxide-confined vertical-cavity surface-emitting lasers with 3 μm diamond-shaped aper- ture are fabricated by comprehensively utilizing the anisotropic properties of wet etching and wet nitr...
关键词：Polarization-Stable 980 nm Vertical-Cavity Surface-Emitting Lasers with Diamond-Shaped Oxide Aperture VCSEL 
Ultralow-Voltage Electric-Double-Layer Oxide-Based Thin-Film Transistors with Faster Switching Response on Flexible Substrates被引量：2
《Chinese Physics Letters》2014年第7期218-221,共4页张进 吴国栋 
Supported by the National Natural Science Foundation of China under Grant No 11174300.
Phosphosilicate glass （PSG） electrolyte films are deposited by improving the content of phosphorus doping during plasma-enhanced chemical vapor deposition, and a fast electric-double-layer （EDL） polarization respo...
Graphene-Oxide-Based Q-Switched Fiber Laser with Stable Five-Wavelength Operation
《Chinese Physics Letters》2012年第11期81-84,共4页ZHAO Jun-Qing WANG Yong-Gang YAN Pei-Guang RUAN Shuang-Chen CHENG Jian-Qun DU Ge-Guo YU Yong-Qin ZHANG Ge-Lin WEI Hui-Feng LUO Jie Yuen H.Tsang 
Supported by the National Key Basic Research and Development Program of China(No 2010CB735904);NSFC(No 61007054);Doctoral Program of High School Research Fund(No 20104408110002);the Improvement and Development Project of Shenzhen Key Lab(No CXB201005240014A);the Science and Technology Project of Shenzhen City(No JC201105170693A);the Key Program of Basic Research Project of Shenzhen(No JC201005250048A);the Applied Technology Developmental Project of Shenzhen University(No 201221);the Research Grants Council of Hong Kong,China(No GRF PolyU 526511).
We demonstrate an erbium-doped ring-cavity fiber laser Q-switched by a graphene oxide-based saturable absorber(GOSA).The GOSA was fabricated by vertically evaporating GO-polyvinylalcohol(GO/PVA)composite dispersion,an...
关键词：PUMP fiber SWITCHED 
Growth Related Carrier Mobility Enhancement of Pentacene Thin-Film Transistors with High-k Oxide Gate Dielectric被引量：1
《Chinese Physics Letters》2009年第7期369-371,共3页于爱芳 祁琼 江鹏 江潮 
Carrier mobifity enhancement from 0.09 to 0.59cm2/Vs is achieved for pentacene-based thin-film transistors （TFTs） by modifying the Hf02 gate dielectric with a polystyrene （PS） thin film. The improvement of the tra...
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