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PULSE: 作品数：1312被引量：1567H指数：14; 导出分析报告; 相关领域：电子电信更多>>; 相关作者：刘正林金勇石晓路徐建国王冰更多>>; 相关机构：深圳市聆动智能科技有限公司学研究院中国农业大学武汉理工大学更多>>; 相关期刊：更多>>; 相关基金：国家自然科学基金国家重点基础研究发展计划国家教育部博士点基金国家高技术研究发展计划更多>>

High photon detection efficiency InGaAs/InP single photon avalanche diode at 250 K被引量：4: 《Journal of Semiconductors》2022年第10期56-63,共8页Tingting He Xiaohong Yang Yongsheng Tang Rui Wang Yijun Liu; jointly supported by the National Key Research and Development Program of China (2019YFB22-05202);National Natural Science Foundation of China(61774152); Planar semiconductor InGaAs/InP single photon avalanche diodes with high responsivity and low dark count rate are preferred single photon detectors in near-infrared communication.However,even with well-designed struct...; 关键词：single period sinusoidal pulse InGaAs/InP single photon avalanche diode parallel balanced photon detection effi-ciency dark count rate noise-equivalent power

Giant spin injection into semiconductor and THz pulse emission: 《Journal of Semiconductors》2019年第7期2-2,共1页Zheng Feng; Spintronics, which use the spin of electrons rather than their direct motion to carry information, has emerged as one of the leading alternatives to traditional electronics, promising faster information processing and...; 关键词：SEMICONDUCTOR THZ PULSE EMISSION

Improving the data retention of phase change memory by using a doping element in selected Ge_2Sb_2Te_5: 《Journal of Semiconductors》2019年第4期29-34,共6页Yaoyao Lu Daolin Cai Yifeng Chen Shuai Yan Lei Wu Yuanguang Liu Yang Li Zhitang Song; support of the"Strategic Priority Research Program"of the Chinese Academy of Sciences(No.XDA09020402);the National Integrate Circuit Research Program of China(No.2009ZX02023-003);the National Natural Science Foundation of China(Nos.61261160500,61376006,61401444,61504157);the Science and Technology Council of Shanghai(Nos.14DZ2294900,15DZ2270900,14ZR1447500);the National Natural Science Foundation of China(61874178); The crystallization characteristics of a ubiquitous T-shaped phase change memory(PCM) cell, under SET current pulse and very small disturb current pulse, have been investigated by finite element modelling. As analyzed...; 关键词：phase change memory CRYSTALLIZATION process SET CURRENT PULSE small disturb CURRENT PULSE finite ELEMENT simulation

The influence of pulsed parameters on the damage of a Darlington transistor被引量：1: 《Journal of Semiconductors》2018年第9期38-43,共6页Qiankun Wang Changchun Chai Yuqian Liu Yintang Yang; supported by the Open Fund of Key Laboratory of Complex Electromagnetic Environment Science and Technology,China Academy of Engineering Physics(No.2015-0214.XY.K); Theoretical research on the heat accumulation effect of a Darlington transistor induced by high power microwave is conducted,and temperature variation as functions of pulse repetitive frequency（PRF）and duty cycle（D...; 关键词：Darlington transistor high power microwave pulse repetitive frequency duty cycle

Optimized power simulation of AlGaN/GaN HEMT for continuous wave and pulse applications: 《Journal of Semiconductors》2015年第7期83-89,共7页林体元庞磊王鑫华黄森刘果果袁婷婷刘新宇; Project supported by the National Natural Science Foundation of China(No.61204086); An optimized modeling method of 8 ×100μm A1GaN/GaN-based high electron mobility transistor （HEMT） for accurate continuous wave （CW） and pulsed power simulations is proposed. Since the self-heating effect can occ...; 关键词：A1GaN/GaN HEMT pulsed I-V trapping effect self-heating effect

Modeling and analysis of the HPM pulse-width upset effect on CMOS inverter被引量：2: 《Journal of Semiconductors》2015年第5期66-71,共6页于新海柴常春乔丽萍杨银堂刘阳席晓文; Project supported by the National Natural Science Foundation of China(No.60776034);the State Key Development Program for Basic Research of China(No.2014CB339900); We derive analytical models of the excess carrier density distribution and the HPM （high-power mi- crowave） upset susceptibility with dependence of pulse-width, which are validated by the simulated results and exper...; 关键词：complementary metal oxide semiconductor upset high power microwave pulse-width

Pulse swallowing frequency divider with low power and compact structure: 《Journal of Semiconductors》2012年第11期79-82,共4页高海军孙玲玲蔡超波詹海挺; supported by the Major State Basic Research Development Program of China(No.2010CB327403);the National Natural Science Foundation of China(No.61001066); A pulse swallowing frequency divider with low power and compact structure is presented.One of the DFFs in the divided by 2/3 prescaier is controlled by the modulus control signal,and automatically powered off when it ...; 关键词：frequency divider low power prescaler multi-modulus CMOS

Effect of charge sharing on the single event transient response of CMOS logic gates: 《Journal of Semiconductors》2011年第9期119-124,共6页段雪岩王丽云来金梅; Project supported by the National Natural Science Foundation of China(No.60876015); This paper presents three new types of pulse quenching mechanism（NMOS-to-PMOS,PMOS-to-NMOS and NMOS-to-NMOS） and verifies them using 3-D TCAD mixed mode simulations at the 90 nm node. The three major contributions o...; 关键词：single event transient charge sharing pulse quenching 3-D TCAD simulation radiation hardening

Characterization analysis of UDSM LVTSCR under TLP stress: 《Journal of Semiconductors》2011年第5期42-47,共6页李立刘红侠董翠周文; Project supported by the National Natural Science Foundation of China(Nos.60976068,60936005);the Cultivation Fund of the Key Scientific and Technical Innovation Project,Ministry of Education of China(No.708083).; The characteristics of a low-voltage triggering silicon-controlled rectifier （LVTSCR） under a transmission line pulse （TLP） and the characteristics of high frequency are analyzed. The research results show that th...; 关键词：ultra-deep sub-micron electrostatic discharge transmission line pulse low-voltage triggering silieoncontrolled rectifier

Radial microstructure and optical properties of a porous silicon layer by pulse anodic etching被引量：1: 《Journal of Semiconductors》2011年第4期35-38,共4页龙永福; Project supported by the National Natural Science Foundation of China;the Hunan Provincial Natural Science Foundation of China;the Fund of the 12th Five-Year Plan for Key Construction Academic Subject(Optics) of Hunan Province,China; This paper investigates the radial refractive index and optical and physical thicknesses of porous silicon （PS） layers prepared by pulse etching by means of reflectance spectroscopy,photoluminescence spectroscopy an...; 关键词：porous silicon radial microstructure optical thickness PHOTOLUMINESCENCE

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