jointly supported by the National Key Research and Development Program of China (2019YFB22-05202);National Natural Science Foundation of China(61774152)
Planar semiconductor InGaAs/InP single photon avalanche diodes with high responsivity and low dark count rate are preferred single photon detectors in near-infrared communication.However,even with well-designed struct...
Spintronics, which use the spin of electrons rather than their direct motion to carry information, has emerged as one of the leading alternatives to traditional electronics, promising faster information processing and...
support of the"Strategic Priority Research Program"of the Chinese Academy of Sciences(No.XDA09020402);the National Integrate Circuit Research Program of China(No.2009ZX02023-003);the National Natural Science Foundation of China(Nos.61261160500,61376006,61401444,61504157);the Science and Technology Council of Shanghai(Nos.14DZ2294900,15DZ2270900,14ZR1447500);the National Natural Science Foundation of China(61874178)
The crystallization characteristics of a ubiquitous T-shaped phase change memory(PCM) cell, under SET current pulse and very small disturb current pulse, have been investigated by finite element modelling. As analyzed...
supported by the Open Fund of Key Laboratory of Complex Electromagnetic Environment Science and Technology,China Academy of Engineering Physics(No.2015-0214.XY.K)
Theoretical research on the heat accumulation effect of a Darlington transistor induced by high power microwave is conducted,and temperature variation as functions of pulse repetitive frequency(PRF)and duty cycle(D...
Project supported by the National Natural Science Foundation of China(No.61204086)
An optimized modeling method of 8 ×100μm A1GaN/GaN-based high electron mobility transistor (HEMT) for accurate continuous wave (CW) and pulsed power simulations is proposed. Since the self-heating effect can occ...
Project supported by the National Natural Science Foundation of China(No.60776034);the State Key Development Program for Basic Research of China(No.2014CB339900)
We derive analytical models of the excess carrier density distribution and the HPM (high-power mi- crowave) upset susceptibility with dependence of pulse-width, which are validated by the simulated results and exper...
supported by the Major State Basic Research Development Program of China(No.2010CB327403);the National Natural Science Foundation of China(No.61001066)
A pulse swallowing frequency divider with low power and compact structure is presented.One of the DFFs in the divided by 2/3 prescaier is controlled by the modulus control signal,and automatically powered off when it ...
Project supported by the National Natural Science Foundation of China(No.60876015)
This paper presents three new types of pulse quenching mechanism(NMOS-to-PMOS,PMOS-to-NMOS and NMOS-to-NMOS) and verifies them using 3-D TCAD mixed mode simulations at the 90 nm node. The three major contributions o...
Project supported by the National Natural Science Foundation of China(Nos.60976068,60936005);the Cultivation Fund of the Key Scientific and Technical Innovation Project,Ministry of Education of China(No.708083).
The characteristics of a low-voltage triggering silicon-controlled rectifier (LVTSCR) under a transmission line pulse (TLP) and the characteristics of high frequency are analyzed. The research results show that th...
Project supported by the National Natural Science Foundation of China;the Hunan Provincial Natural Science Foundation of China;the Fund of the 12th Five-Year Plan for Key Construction Academic Subject(Optics) of Hunan Province,China
This paper investigates the radial refractive index and optical and physical thicknesses of porous silicon (PS) layers prepared by pulse etching by means of reflectance spectroscopy,photoluminescence spectroscopy an...