This study was financially supported by the National Natural Science Foundation of China(No.12074324);the Shenzhen Municipal Science and Technology Innovation Council(No.JCJY20180508163404043).
In this article,we present a theoretical study on the sub-bandgap refractive indexes and optical properties of Sidopedβ-Ga_(2)O_(3) thin films based on newly developed models.The measured sub-bandgap refractive index...
Project supported by the State Key Development Program for Basic Research of China (No. 2012CB619301);the National High Technology Research and Development Program of China (No. 2014AA032608);the National Natural Science Foundation of China (Nos. 11204254, 11404271);the Fundamental Research Funds for the Central Universities (Nos. 2012121014, 20720150027)
With recently developed In N epitaxy via a controlling In bilayer, spectroscopic ellipsometry(SE) measurements had been carried out on the grown In N and the measured ellipsometric spectra were fitted with the Delta...
the Department of Science and Technology,New Delhi,for financial support under the DST-PURSE scheme at the Shivaji University,Kolhapur
Polypyrrole thin films are prepared by the potentiostatic mode of electrodeposition at +0.7 V versus a saturated calomel electrode (SCE). The polypyrrole films are prepared in the presence of different electrolytes...
We deposite silicon carbide thin layers on cleaned Si(100) substrates using the plasma enhanced chemical vapor deposition method,and show that the RFTIR spectrum is periodic in the near and medium infrared ranges. I...
supported by the National Natural Science Foundation of China(Nos.60967003,61077042);the Scientific Research Program Foundation of Jiangxi Provincial Education Department,China(No.GJJ11303)
The refractive index ofas-evaporatedamorphous semiconductor As2S8 film upon an annealing and saturation irradiation and annealing cycle is reversible. Upon successive treatment with annealing and non-saturation irradi...
The refractive indices of disordered (Al xGa 1-x ) 0 51 In 0 49 P,which is grown by low-pressure organometallic vapor phase epitaxy and lattice-matched to GaAs substrate,have been determined by measurin...