SBD

作品数：204被引量：259H指数：7
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相关机构：西安电子科技大学电子科技大学中国电子科技集团第十三研究所深圳天狼芯半导体有限公司更多>>
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Large-areaβ-Ga_(2)O_(3) Schottky barrier diode and its application in DC-DC converters被引量：1
《Journal of Semiconductors》2023年第7期41-44,共4页Wei Guo Zhao Han Xiaolong Zhao Guangwei Xu Shibing Long 
supported by the National Natural Science Foundation of China (NSFC) under Grant Nos. 61925110, 61821091, 62004184 and 62234007;the Key-Area Research and Development Program of Guangdong Province under Grant No. 2020B010174002
We demonstrate superb large-area verticalβ-Ga_(2)O_(3)SBDs with a Schottky contact area of 1×1 mm^(2)and obtain a high-efficiency DC-DC converter based on the device.Theβ-Ga_(2)O_(3)SBD can obtain a forward current...
关键词：β-Ga_(2)O_(3) SBD DC-DC converter 
Tunneling via surface dislocation in W/β-Ga_(2)O_(3) Schottky barrier diodes
《Journal of Semiconductors》2023年第7期23-27,共5页Madani Labed Ji Young Min Amina Ben Slim Nouredine Sengouga Chowdam Venkata Prasad Sinsu Kyoung You Seung Rim 
supported by the National Research Foundation of Korea (NRF) grant funded by the Korea government (MSIT) (No. 2020R1A2C1013693);the Technology Innovation Program (20016102, Development of 1.2k V Gallium oxide power semiconductor devices technology and RS2022-00144027, Development of 1.2k V-class low-loss gallium oxide transistor) by the Ministry of Trade, Industry, and Energy (MOTIE, Korea)
In this work,W/β-Ga_(2)O_(3)Schottky barrier diodes,prepared using a confined magnetic field-based sputtering method,were analyzed at different operation temperatures.Firstly,Schottky barrier height increased with in...
关键词：β-Ga_(2)O_(3) SBD SBD paramatters TUNGSTEN low temperature tunneling via dislocation 
Trap analysis on Pt-AlGaN/GaN Schottky barrier diode through deep level transient spectroscopy
《Journal of Semiconductors》2023年第4期92-97,共6页Ashish Kumar Jayjit Mukherjee D.S.Rawal K.Asokan D.Kanjilal 
the financial support received from the Department of Science and Technology,India through DST-INSPIRE Faculty scheme(DST/INSPIRE/04/2015/001572).
Trap characterization on GaN Schottky barrier diodes(SBDs)has been carried out using deep-level transient spectroscopy(DLTS).Selective probing by varying the ratio of the rate window values(r)incites different trap si...
关键词：deep traps Pt-SBD DLTS rate window defects 
Self-assembled patches in PtSi/n-Si(111)diodes被引量：1
《Journal of Semiconductors》2018年第5期41-47,共7页I.M.Afandiyeva S.Altιndal L.K.Abdullayeva A.I.Bayramova 
Using the effect of the temperature on the capacitance–voltage（C–V）and conductance–voltage（G/ω–V）characteristics of PtSi/n-Si（111）Schottky diodes the profile of apparent doping concentrationthe potential di...
关键词：Schottky barrier diode（SBD） temperature dependence self-assembled patches temperature dependence PtSi/n-Si（111） C–V characteristics quantum wells 
用正偏电容测量研究SBD的界面态被引量：1
《Journal of Semiconductors》1992年第1期28-35,共8页陈弘毅 
本文描述使用以阻抗测量仪为中心的正偏电容测量系统提取金属-半导体接触界面态参数的方法.该方法用来分析了分子束外延 CoSi_2层与N型Si接触和TiW 合金层与N型GaAs接触的界面态.
关键词：肖特基势垒 二极管 SBD 界面 测量 
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