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作品数：614被引量：1036H指数：13
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Bufferless Epitaxial Growth of GaAs on Step-Free Ge(001)Mesa
《Chinese Physics Letters》2021年第6期67-71,共5页Ding-Ming Huang Jie-Yin Zhang Jian-Huan Wang Wen-Qi Wei Zi-Hao Wang Ting Wang Jian-Jun Zhang 
Supported by the National Natural Science Foundation of China(Grant Nos.61975230,61635011,61804177 and 11804382);the National Key Research and Development Program of China(Grant No.2018YFB2200104);Beijing Municipal Science and Technology Commission(Grant No.Z191100004819010);the Key Research Program of Frontier Sciences,CAS(Grant No.QYZDB-SSW-JSC009)。
GaAs/Ge heterostructures have been employed in various semiconductor devices such as solar cells,high-performance CMOS transistors,andⅢ-Ⅴ/Ⅳheterogeneous optoelectronic devices.The performance of these devices is di...
关键词：GAAS/GE OPTOELECTRONIC TUNNELING 
Adaptive Synchronization and Anti-Synchronization of a Chaotic Lorenz–Stenflo System with Fully Unknown Parameters
《Chinese Physics Letters》2013年第7期26-29,共4页M.Mossa Al-sawalha 
An adaptive control scheme is developed to study the synchronization and the anti-synchronization behaviors between two identical Lorenz–Stenflo systems with unknown parameters.This adaptive controller is designed ba...
关键词：parameters. verify identical 
Epitaxy of an Al-Droplet-Free AlN Layer with Step-Flow Features by Molecular Beam Epitaxy被引量：1
《Chinese Physics Letters》2011年第6期318-321,共4页PAN Jian-Hai WANG Xin-Qiang CHEN Guang LIU Shi-Tao FENG Li XU Fu-Jun TANG Ning SHEN Bo 
by the National Natural Science Foundation of China under Grant Nos 11023003,60890193 and 60990313;the Specialized Research Fund for the Doctoral Program of Higher Education in China.
We investigate epitaxy of AlN layers on sapphire substrates by molecular beam epitaxy.It is found that an atomically flat surface can be obtained under Al-rich conditions at growth temperature of 780°C.However,the gr...
关键词：EPITAXY SAPPHIRE NARROW 
Growth and Characterization of A1GaN/A1N/GaN HEMT Structures with a Compositionally Step-Graded A1GaN Barrier Layer被引量：2
《Chinese Physics Letters》2007年第6期1705-1708,共4页马志勇 王晓亮 胡国新 冉军学 肖红领 罗卫军 唐健 李建平 李晋闽 
Supported by the Knowledge Innovation Project of Chinese Academy of Sciences （No KGCX2-SW-107-1）, the National Natural Science Foundation of China under Grant No 60606002, the State Key Basic Research Programme of China under Grant Nos 2002CB311903, 2006CB604905, and 513270505.
A new A1GaN/A1N/GaN high electron mobility transistor （HEMT） structure using a compositionally step-graded A1GaN barrier layer is grown on sapphire by metalorganic chemical vapour deposition （MOCVD）. The structure...
Amplified Spontaneous Emission of Rhodamine B-Doped Step-Index Polymer Optical Fibre
《Chinese Physics Letters》2005年第3期618-620,共3页李增昌 梁浩 郑志强 张其锦 明海 
Radio-Frequency Characteristics of the Coaxial Step-Disk-Loaded Slow-Wave Structure for Relativistic Travelling Wave Tubes
《Chinese Physics Letters》2005年第3期754-757,共4页岳玲娜 王文祥 魏彦玉 宫玉彬 
Analysis of Step Etching on SrTiO_(3) Substrates for the Step-Edge YBCO Josephson Junctions
《Chinese Physics Letters》2001年第1期106-108,共3页CHEN Geng-Hua WANG Jing ZHAO Shi-Ping HAN Bing XU Feng-Zhi YANG Qian-Sheng 
Supported by the National Center for R&D on Superconductivity and the Ministry of Science and Technology of China(NKBRSF-G19990646).
A way to determine some important etching parameters in the step fabrication for highTc step-edge Josephson junctions is described based on an analysis of the dynamics of the etching process.The optimum thickness of t...
关键词：process. JOSEPHSON STEPS 
GROWTH STEPS ON Pt(110)
《Chinese Physics Letters》1990年第6期245-247,共3页LI Zongquan SHEN Hui QIN Yong 
Project supported by the National Natural Science Foundation of China.
The observation of growth steps on Pt(110)was carried out by means of reflection electron microscopy.The huge terraces on Pt(110)have a zigzag shape,showing that the risers of those steps are composed of(111)and(111)f...
关键词：STEPS showing 
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